Preliminary SXB-4089 SXB-4089Z Product Description Sirenza Microdevices’ SXB-4089 amplifier is a high efficiency InGaP/ GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost, surfacemountable plastic package. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 400-2500 MHz cellular, ISM, WLL, PCS, WCDMA applications. Pb RoHS Compliant & Green Package 400-2500 MHz ½ W Medium Power InGaP/GaAs HBT Amplifier with Active Bias Its high linearity makes it an ideal choice for multi-carrier as well as digital applications. Typical IP3, P1dB, Gain dBm 50 45 OIP3 40 P1dB 35 Gain Product Features • On-chip Active Bias Control, Single 5V Supply • High Output 3rd Order Intercept: +45 dBm typ. • High P1dB : +28 dBm typ. • High Gain: +20 dB at 880 MHz 30 25 20 15 • Low Rth: 25°C/W typ. 10 • Robust 2000V ESD, Class 2 5 Applications 0 880 MHz 1960 MHz Symbol • W-CDMA, PCS, Cellular Systems • Multi-Carrier Applications 2140 MHz Parameters Units Frequency Min. Typ. P1dB Output Power at 1 dB Compression dBm 880 MHz 1960 MHz 2140 MHz 27.5 27.5 27.5 S21 Small Signal Gain dBm 880 MHz 1960 MHz 2140 MHz 20 15 14.5 S11 OIP3 1.3:1 1.3:1 1.3:1 dBm 880 MHz 1960 MHz 2140 MHz 43.5 44.5 44.5 880 MHz 1960 MHz 2140 MHz 4.9 3.3 3.3 Input VSWR Output Third Order Intercept Point (Pout/Tone = +11 dBm, Tone spacing = 1 MHz) 13 880 MHz 1960 MHz 2140 MHz Max. 16 NF Noise Figure dB VCC Device Operating Voltage V 4.75 5 5.25 ID Device Operating Current mA 235 260 285 RTH, j-l Thermal Resistance (junction - lead) Test Conditions: Ta = 25°C °C/W 25.3 ZO = 50 Ohms The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved. 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-103215 Rev C Preliminary SXB-4089 ½ Watt InGaP/GaAs HBT Amp 880 MHz Application Circuit Data, VCC=5V, ID=270mA 25 28 23 26 21 Gain vs. Frequency dB dBm P1dB vs. Frequency 30 19 24 25C S21_25C -40C 22 17 S21_-40C 85C S21_85C 20 0.85 0.86 0.87 0.88 0.89 0.9 15 0.85 0.91 0.86 Frequency (GHz) Input/Output Return Loss, Isolation vs. Frequency, T=25C 0 0.9 0.91 OIP3 vs. Frequency (11 dBm tones) 50 -5 47 dBm -10 dB 0.87 0.88 0.89 Frequency (GHz) -15 S11 S12 S22 -20 44 41 25C -25 38 -30 0.85 35 0.85 -40C 85C 0.86 0.87 0.88 0.89 Frequency (GHz) 0.9 0.91 0.87 0.88 0.89 0.9 0.91 Frequency (GHz) OIP3 vs. Tone Power @880MHz 50 0.86 ACP @880MHz vs. Ch. Pwr.(IS-95 9Ch.Fwd.) -40 -45 25C 47 -40C -50 dBc IM3 (dBc) 85C 44 41 25C 38 -55 -60 -65 -40C -70 85C -75 35 6 8 10 12 14 16 18 20 303 S. Technology Ct. Broomfield, CO 80021 15 16 17 18 19 20 21 22 Ch. Pwr Pout (dBm) Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-103215 Rev C Preliminary SXB-4089 ½ Watt InGaP/GaAs HBT Amp 1960 MHz Application Circuit Data, VCC=5V, ID=270mA P1dB vs. Frequency 20 28 18 26 16 Gain vs. Frequency dB dB 30 14 24 25C 22 S21_25C 12 -40C S21_-40C 85C 20 1.93 1.94 S21_85C 1.95 1.96 1.97 1.98 10 1.93 1.99 1.94 GHz Input/Output Return Loss, Isolation vs. Frequency, T=25C -5 47 -10 44 -15 1.98 1.99 1.98 1.99 OIP3 vs. Frequency 50 dBm dB 0 1.95 1.96 1.97 Frequency (GHz) 41 -20 S11 S12 S22 -25 -30 1.93 1.94 1.95 1.96 1.97 Frequency (GHz) 1.98 -40C 85C 35 1.93 1.99 1.94 1.95 1.96 1.97 Frequency (GHz) OIP3 vs. Tone Power @1960MHz 50 25C 38 -40 ACP @1960MHz vs. Ch. Pwr.(IS-95 9Ch.Fwd.) -45 25C 47 -40C -50 dBc IM3 (dBc) 85C 44 41 25C -55 -60 -65 -40C 38 -70 85C 35 -75 6 8 10 12 14 16 18 20 Pout (dBm) 303 S. Technology Ct. Broomfield, CO 80021 15 16 17 18 19 20 21 22 Ch. Pwr Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-103215 Rev C Preliminary SXB-4089 ½ Watt InGaP/GaAs HBT Amp 2140 MHz Application Circuit Data, VCC=5V, ID=270mA P1dB vs. Frequency 30 Gain vs. Frequency 20 S21_25C 28 18 26 16 S21_-40C dB dB S21_85C 14 24 25C -40C 22 12 85C 20 2.11 2.12 2.13 2.14 2.15 2.16 10 2.11 2.17 2.12 GHz Input/Output Return Loss, Isolation vs. Frequency, T=25C 0 2.16 2.17 OIP3 vs. Frequency (11 dBm tones) 50 -5 47 S11 S12 S22 44 dBm -10 dB 2.13 2.14 2.15 Frequency (GHz) -15 41 -20 25C -25 38 -30 2.11 35 2.11 -40C 85C 2.12 2.13 2.14 2.15 Frequency (GHz) 2.16 2.17 2.12 2.13 2.14 2.15 2.16 2.17 Frequency (GHz) ACP @2140MHz vs. Ch. Pwr.(WCDMA 64Ch.Fwd.) OIP3 vs. Tone Power @2140MHz -35 50 -40 47 25C 44 dBc IM3 (dBc) -45 -40C 85C -50 41 -55 25C -40C 38 -60 85C 35 -65 6 8 10 12 14 16 18 20 Pout (dBm) 303 S. Technology Ct. Broomfield, CO 80021 15 16 17 18 19 20 21 Ch. Pwr Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-103215 Rev C Preliminary SXB-4089 ½ Watt InGaP/GaAs HBT Amp Application Schematic for 880 MHz Ζ=50Ω, 3.2° Ζ=50Ω, 5.4° Ζ=50Ω, 3.0° Ζ=50Ω, 2.8° Ζ=50Ω, 20.1° Note: Electrical lengths are determined from the center of a shunt component, a cut on the center trace and edge of lead on package. Evaluation Board Layout for 880 MHz 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 5 http://www.sirenza.com EDS-103215 Rev C Preliminary SXB-4089 ½ Watt InGaP/GaAs HBT Amp Application Schematic for 1960 MHz Ζ=50Ω, 4.7° Ζ=50Ω, 1.9° Ζ=50Ω, 1.9° Ζ=50Ω, 16.8° Note: Electrical lengths are determined from the center of a shunt component, a cut on the center trace and edge of lead on package. Evaluation Board Layout for 1960 MHz 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 6 http://www.sirenza.com EDS-103215 Rev C Preliminary SXB-4089 ½ Watt InGaP/GaAs HBT Amp Application Schematic for 2140 MHz Ζ=50Ω, 4.7° Ζ=50Ω, 2.3° Ζ=50Ω, 1.9° Ζ=50Ω, 16.8° Note: Electrical lengths are determined from the center of a shunt component, a cut on the center trace and edge of lead on package. Evaluation Board Layout for 2140 MHz 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 7 http://www.sirenza.com EDS-103215 Rev C Preliminary SXB-4089 ½ Watt InGaP/GaAs HBT Amp Nominal Package Dimensions Suggested PCB Pad Layout Dimensions in inches (millimeters) Refer to package drawing posted at www.sirenza.com for tolerances Dimensions in inches [millimeters] Bottom View Side View Part Number Ordering Information Part Number Reel Size Devices / Reel SXB-4089 7" 1000 SXB-4089Z 7" 1000 Absolute Maximum Ratings Parameter Absolute Limit Max Device Current (ID) 500 mA Max Device Voltage (VD) 6V Max. RF Input Power 60mW Max. Dissipated Power 2W 4 4 XB40 XB4Z Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD < (TJ - TL) / RTH, j-l TL=TLEAD Tin-Lead 2 3 Lead Free Function 1 RF IN RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. 2, 4 GND Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible 3 RF OUT/ BIAS MSL (Moisture Sensitivity Level) Rating: Level 1 303 S. Technology Ct. Broomfield, CO 80021 1 Pin # ESD: Class 2 (Passes 2000V ESD Pulse) Appropriate precautions in handling, packaging and testing devices must be observed. 3 3 2 2 1 1 +150°C 3 -40°C to +85°C Max. Storage Temp. 2 +165°C 1 Max. Junction Temp. (TJ) Operating Temp. Range (TL) Package Marking Phone: (800) SMI-MMIC 8 Description RF output and bias pin. DC voltage is present on this pin, therefore a DC blocking capacitor is necessary for proper operation. http://www.sirenza.com EDS-103215 Rev C