TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/253 Devices Qualified Level 2N930 JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C(1) @ TC = +250C(2) Operating & Storage Junction Temperature Range Symbol Value Units VCEO VCBO VEBO IC 45 60 6.0 30 300 600 -55 to +200 Vdc Vdc Vdc mAdc PT TJ, Tstg mW 0 C TO- 18* (TO-206AA) THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 2.0 mW/0C above TA = +250C 2) Derate linearly 4.0 mW/0C above TC = +250C Symbol RθJC Max. 97 Unit C/W 0 *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TC = +250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10 mAdc Collector-Base Cutoff Current VCB = 60 Vdc VCB = 45 Vdc Emitter-Base Cutoff Current VEB = 6.0 Vdc VEB = 5.0 Vdc Collector-Emitter Cutoff Current VCE = 45 Vdc Collector-Base Cutoff Current VCE = 5.0 Vdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 V(BR)CEO Vdc 45 ICBO 10 10 IEBO 10 5.0 ICES ICEO 2.0 2.0 µAdc ηAdc µAdc ηAdc ηAdc ηAdc 120101 Page 1 of 2 2N930, JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. hFE 100 150 300 Unit ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 10 µAdc, VCE = 5.0 Vdc IC = 500 µAdc, VCE = 5.0 Vdc IC = 10 mAdc, VCE = 5.0 Vdc Collector-Emitter Saturation Voltage IC = 10 mAdc, IB = 0.5 mAdc Base-Emitter Saturation Voltage IC = 10 mAdc, IB = 0.5 mAdc 600 VCE(sat) VBE(sat) 1.0 0.6 1.0 1.5 6.0 150 600 25 32 Vdc Vdc DYNAMIC CHARACTERISTICS Magnitude of Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 500 µAdc, VCE = 5.0 Vdc, f = 30 MHz Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz Small-Signal Short-Circuit Input Impedance VCB = 5.0 Vdc, IE = 1.0 mAdc, f = 1.0 kHz Small-Signal Short-Circuit Output Admittance VCB = 5.0 Vdc, IE = 1.0 mAdc, f = 1.0 kHz Output Capacitance VCB = 5.0 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Noise Figure VCE = 5 Vdc; IC = 10 µAdc; Rg =10kΩ Test 1: f = 100 Hz Test 2: f = 1.0 kHz Test 3: f = 10 kHz (3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 hfe hfe hib hob Cobo NF 1.0 8.0 5 3 3 Ω µΩ pF dB 120101 Page 2 of 2