ETC 2N2222A

2N2222A
High Speed Switching Transistor
Features:
• NPN Silicon Planar Switching Transistor.
• Fast switching devices exhibiting short turn-off and low saturation
voltage characteristics.
• Switching and Linear application DC and VHF Amplifier
applications.
TO-18 Metal Can Package
Dimensions
Minimum
Maximum
A
5.24
5.84
B
4.52
4.97
C
4.31
5.33
D
0.4
0.53
E
—
0.76
F
—
1.27
G
—
2.97
H
0.91
1.17
J
0.71
1.21
K
12.7
—
L
45°
Dimensions : Millimetres
Pin Configuration:
1. Emitter
2. Base
3. Collector
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31/05/05 V1.0
2N2222A
High Speed Switching Transistors
Absolute Maximum Ratings
Parameter
Symbol
Rating
Collector-Emitter Voltage
VCEO
40
Collector-Base Voltage
VCBO
75
Emitter-Base Voltage
VEBO
6.0
IC
800
mA
PD
500
2.28
mW
mW/°C
PD
1.2
6.85
W
mW/°C
TJ, Tstg
-65 to +200
°C
Collector Current Continuous
Power Dissipation at Ta = 25°C
Derate above 25°C
Power Dissipation at TC= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Unit
V
Electrical Characteristics (Ta = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Collector-Emitter Voltage
VCEO
Collector-Base Voltage
Emitter-Base Voltage
Minimum
Maximum
IC = 10mA, IB = 0
40
-
VCBO
IC = 10µA, IE = 0
75
-
VEBO
IE = 10µA, IC = 0
6.0
-
ICBO
VCB = 60V, IE = 0
ICEX
Ta = 150°C
VCB = 60V, IE = 0
VCE = 60V, VEB = 3V
IEBO
VEB = 3V, IC = 0
-
10
IBL
VCE = 60V, VEB = 3V
-
20
*VCE(Sat)
IC = 150mA, IB = 15mA
-
0.3
IC = 500mA, IB = 50mA
-
1.0
IC = 150mA, IB = 15mA
-
0.6-1.2
IC = 500mA, IB = 50mA
-
2.0
Collector-Cut off Current
Emitter-Cut off Current
Base-Cut off Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Value
*VBE(Sat)
Page 2
Unit
V
10
nA
10
10
µA
nA
-
nA
V
31/05/05 V1.0
2N2222A
High Speed Switching Transistors
Electrical Characteristics (Ta = 25°C unless otherwise specified)
Parameter
DC Current Gain
Symbol
Test Condition
Rating
hFE
IC = 0.1mA, VCE = 10V
IC = 1mA, VCE = 10V
IC = 10mA, VCE = 10V
Ta = 55°C
IC = 10mA, VCE = 10V
IC = 150mA, VCE = 10V
IC = 150mA, VCE = 1V
IC = 500mA, VCE = 10V
>35
>50
>75
Unit
>35
100-300
>50
>40
-
-
Dynamic Characteristics
ALL F = 1kHz
Small Signal Current Gain
hfe
IC = 1mA, VCE = 10V
IC = 10mA, VCE = 10V
50 - 300
75 - 375
Input Impedance
hie
IC = 1mA, VCE = 10V
IC = 10mA, VCE = 10V
2.0-8.0
0.25-1.25
kΩ
Voltage Feedback Ratio
hre
IC = 1mA, VCE = 10V
IC = 10mA, VCE = 10V
<8.0
<4.0
x10-4
Output Admittance
hoe
IC = 1mA, VCE = 10V
IC = 10mA, VCE = 10V
5.0-35
25-200
umhos
Collector Base Time Constant
rb'Cc
IE = 20mA, VCB = 20V
f = 31.8MHz
<150
ps
Real Part Common-Emitter High Frequency
Re(hie)
IC = 20mA, VCE = 20V
<60
Ω
-
f = 300MHz
-
-
NF
IC = 100µA, VCE = 10V
Rs = 1kohms, f = 1kHz
<4.0
dB
ft
IC = 20mA, VCE = 20V
f = 100MHz
>300
MHz
Output Capacitance
Cob
VCB = 10V, IE = 0
f = 100kHz
<8.0
Input Capacitance
Cib
VEB = 0.5V, IC = 0
f = 100kHz
<25
td
tr
ts
tf
IC = 150mA,IB1 = 15mA
VCC = 30V, VBE = 0.5V
IC = 150mA, IB1 =
IB2 = 15mA, VCC = 30V
Input Impedance
Noise Figure
Dynamic Characteristics
Transistors Frequency
pF
Switching Time
Delay Time
Rise Time
Storage Time
Fall Time
<10
<25
<225
<60
ns
*Pulse Condition: Pulse Width = 300µs, Duty Cycle = 2%
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31/05/05 V1.0
2N2222A
High Speed Switching Transistors
Specifications
VCEO
maximum
(V)
IC
maximum
(A)
VCE(sat)
maximum
(V)
at IC = 150mA
toff
maximum
(ns)
at IC = 150mA
hFE
minimum
at IC = 150mA
Ptot
at 25°C
(mW)
Package
and
Pin Out
Part Number
40
0.8
0.3
60
100
500
TO-18
2N2222A
Page 4
31/05/05 V1.0
2N2222A
High Speed Switching Transistors
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31/05/05 V1.0