ETC AP1093

AP1093
2.4~2.5 GHz Power Amplifier
2004.08.30
The AP1093 is a linear, low current power amplifier
in ISM band utilizing InGaP /GaAs HBT process. It
features a low current of 130mA, high gain of 30 dB,
linear power of 19dBm and PAE of 18% for 802.11g
under 3.3V. The AP1093 is housed in a 3 x 3 (mm),
16-pin, QFN leadless package. The AP1093 is
suitable to be used in 802.11b/g WLAN and other
2.4GHz applications.
• Low current :
130mA for 11g linear power(19dBm) at 3.3V
175mA for 11g linear power(22dBm) at 5V
• High Efficiency:
PAE>35% @802.11b linear power
PAE>18% @802.11g linear power
• High Gain: 30~31dB
Major Applications
Pin Details
• IEEE 802.11b/g WLAN Clients
• IEEE 802.11b/g WLAN Access Points
• 2.4 GHz ISM Band
Functional Block Diagram
1
GND
2
Vcc_Bias
3
Dect_Out
4
NC
Vcc1
Vcc1
16
15
14
13
12 RF OUT
Input
Match
11 RF OUT
10 RF OUT
Bias
Detector
9
NC
Pin Number
Name
Description
1
2
RF_IN
GND
RF input
DC and RF ground
3
Vcc_Bias
Supply voltage for bias circuit
4
Dect_Out
Power detector output
5
6
7
8
9
10
11
12
Vb1
Vb2
GND
NC
NC
RF_OUT
RF_OUT
RF_OUT
1st-stage control voltage
2nd-stage control voltage
DC and RF ground
13
VCC1
14
VCC1
5
6
7
8
15
NC
Vb1
Vb2
GND
NC
16
NC
Package Base
No contact (Connect to ground for
better thermal dissipation)
RF output. Require external matching.
The detail configuration can be found in
Application Notes
Supply voltage for first stage. Some
bypass capacitors are needed for
system application. The detail
configuration can be found in
Application Notes.
No contact (Connect to ground for
better thermal dissipation)
The package ground provides circuit
Center Metal ground as well as heat dissipation path
for the power amplifier.
Vb2 can be connected with Vb1 pin into a single Vref through external resistor. (Please refer to the AP1093 Application note)
For more information,please contact us at:
© 2003 RF Integrated Corporation. All rights reserved.
Sales Dept.
Tel: +886-2-2698-1022
e-mail: sales@rfintc.com
RF integrated Corp. reserves the right to make any changes to the specifications without notice.
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AP1093
RF IN
NC
• Detector
AP1093
2.4~2.5 GHz Power Amplifier
2004.08.30
Electrical Characteristics
• Under Vc=3.3V, Vref=2.85V, Ta=25ºC
PARAMETER
CONDITION
Freq.
Total current
Pout=19dBm, 64QAM/54Mbps
Pout=24dBm, CCK/11Mbps
SYMBOL
MIN.
f
2.4
Icc
TYP.
MAX.
UNIT
2.5
GHz
130
208
mA
19
dBm
Linear Output Power
EVM<3%, 64QAM/54Mbps
Bias control reference
current
Icq=85mA
Iref
0.95
mA
Pout=19dBm, 64QAM/54Mbps
Gp
30
dB
Icq
85
mA
EVM
2.5
%
Power Gain
Quiescent current
EVM
Pout=19dBm, 64QAM/54Mbps
802.11b ACP-1st Side
Lobe
Pout=24dBm, CCK/11Mbps
-36
dBc
802.11b ACP-2nd Side
Lobe
Pout=24dBm, CCK/11Mbps
-51
dBc
Input VSWR
2:1
Output VSWR
2.5:1
PAE @ linear power
Pout=16dBm, 64QAM/54Mbps
Pout=24dBm, CCK/11Mbps
PAE
18
35
%
AP1093
For more information,please contact us at:
© 2003 RF Integrated Corporation. All rights reserved.
Sales Dept.
Tel: +886-2-2698-1022
e-mail: sales@rfintc.com
RF integrated Corp. reserves the right to make any changes to the specifications without notice.
2 of 7
AP1093
2.4~2.5 GHz Power Amplifier
2004.08.30
Electrical Characteristics
• Under Vc=5V, Vref=2.95V, Ta=25ºC
PARAMETER
CONDITION
Freq.
Total current
@ Pout=22dBm, 64QAM/54Mbps
@Pout=27dBm, CCK/11Mbps
SYMBOL
MIN.
f
2.4
Icc
TYP.
MAX.
UNIT
2.5
GHz
175
285
mA
22
dBm
Linear Output Power
EVM<3%, 64QAM/54Mbps
Bias control reference
current
@Icq=105mA
Iref
1.1
mA
@ Pout=22dBm, 64QAM/54Mbps
Gp
29
dB
Icq
105
mA
EVM
3
%
Power Gain
Quiescent current
EVM
@ Pout=22dBm, 64QAM/54Mbps
802.11b ACP-1st Side
Lobe
@Pout=27dBm, CCK/11Mbps
-35
802.11b ACP-2nd Side
Lobe
@Pout=27dBm, CCK/11Mbps
-51
In put VSWR
2
Out put VSWR
2.5
PAE @ linear power
@ Pout=22dBm, 64QAM/54Mbps
@Pout=27dBm, CCK/11Mbps
Absolute Maximum Ratings
18
35
%
Important Note:
Rating
Unit
DC Power Supply For
Collector
+5
V
DC Supply Current For
Collector
450
mA
RF Input Power
+5
dBm
Operating Ambient
Temperature
-40 to +85
°C
Storage Temperature
-40 to +125
°C
The information provided in this datasheet is deemed to
be accurate and reliable only at present time. RF
Integrated Corp. reserves the right to make any
changes to the specifications in this datasheet without
prior notice.
© 2003 RF Integrated Corporation. All rights reserved.
Sales Dept.
Tel: +886-2-2698-1022
e-mail: sales@rfintc.com
RF integrated Corp. reserves the right to make any changes to the specifications without notice.
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AP1093
Parameter
For more information,please contact us at:
PAE
AP1093
2.4~2.5 GHz Power Amplifier
2004.08.30
Fig. 1
EVM & Icc vs. Pout (dBm)
8
160
140
120
100
80
60
40
20
0
6
4
EVM(%)
Icc(mA)
(Vc1=Vc2=Vcc_bias=3.3V, Vref=2.85V, f=2.412GHz, 54Mbps OFDM Signal)
2
0
8
9 10 11 12 13 14 15 16 17 18 19 20 21
Pout (dBm)
Icc(mA)@Vc=3.3V
EVM(%)@Vc=3.3V, Included Signal Source (Source EVM ~0.8%)
Fig. 3
EVM ( %)
2.5
2
1.5
1
0
2.4 2.41 2.42 2.43 2.44 2.45 2.46 2.47 2.48 2.49 2.5
Frequency (GHz)
50
40
30
20
10
0
Input Power (dBm)
EVM(%)@3.3V
Gain(dB)@3.3V
PAE(%)@3.3V
Pout(dBm)@3.3V
For more information,please contact us at:
© 2003 RF Integrated Corporation. All rights reserved.
Sales Dept.
Tel: +886-2-2698-1022
e-mail: sales@rfintc.com
RF integrated Corp. reserves the right to make any changes to the specifications without notice.
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AP1093
0.5
60
PAE (%)
3
Gain, POUT, PAE vs. PIN
- 1 5 .7
- 1 4 .7
- 1 3 .8
- 1 2 .9
- 1 2 .0
- 1 1 .0
- 1 0 .0
- 9 .2
- 8 .2
- 7 .1
- 5 .8
- 4 .2
- 2 .1
2 .9
EVM vs. Frequency
(Pout=19dBm, With 54 Mb/s, OFDM
Modulation)
PAE(%), Gain (dB), Output Power (dBm)
Fig. 2
AP1093
2.4~2.5 GHz Power Amplifier
2004.08.30
Fig. 5
Fig. 4
Power Gain vs. Frequency
Detector Output vs. Output Power
1.1
33
1.0
31
Power Gain (dB)
Detector Output (V)
35
0.9
0.8
0.7
0.6
29
27
25
23
21
19
0.5
17
0.4
15
14 15 16 17 18 19 20 21 22 23 24 25 26 27
2
2.12
2.24
Output Power (dBm)
Vdec(V)@3.3V
2.36
2.48
2.6
Frequency (MHz)
2.72
2.84
2.96
Gain(dB)@Pout~17dBm, Vc=3.3V
Fig. 6
Fig. 7
Input Return Loss vs. Frequency
Output Return Loss vs. Frequency
0
0
-2
-5
-6
dB (S22)
dB (S11)
-4
-8
-10
-12
-10
-15
-25
-16
2.00
2.13
2.26
2.39
2.52
Frequency (GHz)
For more information,please contact us at:
2.65
2.78
2.91
2
2.12
2.24
2.36
2.48
2.6
2.72
2.84
2.96
Frequency (GHz)
© 2003 RF Integrated Corporation. All rights reserved.
Sales Dept.
Tel: +886-2-2698-1022
e-mail: sales@rfintc.com
RF integrated Corp. reserves the right to make any changes to the specifications without notice.
5 of 7
AP1093
-20
-14
AP1093
2.4~2.5 GHz Power Amplifier
2004.08.30
Fig. 8
Gain, ACPR, PAE vs Pout_3.3V
(With 11b CCK Modulation)
ACP1
ACP2
PAE
Gain
Icc
50
250
200
40
150
30
100
20
10
50
0
0
Icc (mA)
PAE(%) ,ACPR(dBc) & Gain (dB)
60
14 15 16 17 18 19 20 21 22 23 24 25 26 27
Pout (dBm)
Fig. 9
350
60
300
50
250
40
200
30
150
20
100
10
50
0
0
14 15 16 17 18 19 20 21 22 23 24 25 26 27 28
Pout (dBm)
For more information,please contact us at:
© 2003 RF Integrated Corporation. All rights reserved.
Sales Dept.
Tel: +886-2-2698-1022
e-mail: sales@rfintc.com
RF integrated Corp. reserves the right to make any changes to the specifications without notice.
6 of 7
AP1093
PAE(%), ACPR(dBc) & Gain (dB)
Icc
Icc(mA)
ACP1
70
Gain, ACPR, PAE vs Pout_5V
(With 11b CCK Modulation)
ACP2
PAE
Gain
AP1093
2.4~2.5 GHz Power Amplifier
2004.08.30
Package Outline
Top View
Bottom View
3.00 + 0.1
1.50
0.40
MARKING
1.50
0.23 TYP.
0.23 TYP.
0.5 TYP.
3.00 + 0.1
0.40
0.5 TYP.
Unit: mm
0.75 MAX.
C
SEATING PLANE
0.25
0.50
0.0 ~ 0.05
Side View
AP1093
Note:
1.
Dimension and tolerance conform to ASME Y14.5M1994.
2.
Refer to JEDEC STD. MO-220 WEED-2 ISSUE B
For more detailed information, please refer to AP1093 Application Note.
For more information,please contact us at:
© 2003 RF Integrated Corporation. All rights reserved.
Sales Dept.
Tel: +886-2-2698-1022
e-mail: sales@rfintc.com
RF integrated Corp. reserves the right to make any changes to the specifications without notice.
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