BFR96 N-P-N bipolar silicon RF transistor in plastic package SOT-37 5.2max 5.5max 9.0max 1.5max 1.0max 2 5.5max 1 3 Pinouts: 1- Base, 2- Collector, 3-Emitter Ratings Symbol VCBO VCEO VEBO IC Ptot Parameter, unit Limits Collector- base voltage, V Collector- emitter voltage, V Emitter- base voltage, V Collector current, mA Power dissipation, mW 20 15 3 75 700 Characteristics (T A = 25°C) Symbol fT hFE ICBO GPS F CC Parameter, unit, test conditions Transition frequency, GHz, IE=50mA, VCB=10V DC current gain, IE=50mA, VCB=10V Collector cut-off current, nA, IE= 0mA, VCB=10V Power gain, dB, IE=50mA, VCE=10V, f=500MHz Noise figure, dB IE=50mA, VCE=10V, f=500MHz Collector capacitance, pF, VCB=10V, f= 1MHz Planeta Electronic company Limits min max 3.2 50 100 13.0 4.0 2.0 JSC Planeta, 2/13, Fedorovsky Ruchei, Veliky Novgorod, 173004, Russia Ph/Fax: +7 (81622) 3-17-36, 3-32-86 E-mail: [email protected] http://www.planetasemi.com