ETC BFR96

BFR96
N-P-N bipolar silicon RF transistor
in plastic package SOT-37
5.2max
5.5max
9.0max
1.5max
1.0max
2
5.5max
1
3
Pinouts:
1- Base, 2- Collector, 3-Emitter
Ratings
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Parameter, unit
Limits
Collector- base voltage, V
Collector- emitter voltage, V
Emitter- base voltage, V
Collector current, mA
Power dissipation, mW
20
15
3
75
700
Characteristics (T A = 25°C)
Symbol
fT
hFE
ICBO
GPS
F
CC
Parameter, unit, test conditions
Transition frequency, GHz,
IE=50mA, VCB=10V
DC current gain,
IE=50mA, VCB=10V
Collector cut-off current, nA,
IE= 0mA, VCB=10V
Power gain, dB,
IE=50mA, VCE=10V, f=500MHz
Noise figure, dB
IE=50mA, VCE=10V, f=500MHz
Collector capacitance, pF,
VCB=10V, f= 1MHz
Planeta
Electronic
company
Limits
min
max
3.2
50
100
13.0
4.0
2.0
JSC Planeta, 2/13, Fedorovsky Ruchei, Veliky Novgorod, 173004, Russia
Ph/Fax: +7 (81622) 3-17-36, 3-32-86 E-mail: planeta@novgorod.net
http://www.planetasemi.com