MICROSEMI 2N2369A

580 Pleasant St.
Watertown, MA 02172
PH: (617) 926-0404
FAX: (617) 924-1235
2N2369A
Features
•
•
•
•
40 Volts
200mAmps
Meets MIL-S-19500/317
Collector-Base Voltage 40V
Collector Current: 200 mA
Fast Switching 30 nS
NPN
BIPOLAR
TRANSISTOR
Maximum Ratings
RATING
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current -- Continuous
Total Device Dissipation
o
@ T A = 25 C
o
Derate above 25 C
Total Device Dissipation
o
@ T C = 25 C
o
Derate above 25 C
Operating Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Mechanical Outline
Datasheet# MSC0277A 5/19/97
SYMBOL
MAX.
UNIT
VCEO
VCES
VCBO
VEBO
IC
PD
15
40
40
4.5
200
Vdc
Vdc
Vdc
Vdc
mA
0.36
2.06
Watt
o
mW/ C
1.2
6.85
-65 + 200
-65 + 200
486
146
Watt
o
mW/ C
o
C
o
C
o
C/W
o
C/W
PD
TJ
TS
RθJA
RθJC
2N2369A
Electrical Parameters (TA @ 25°°C unless otherwise specified)
CHARACTERISTICS
Off Characteristics
Collector-Emitter Breakdown Voltage
(I C = 10 µA, VBE = 0)
Collector-Emitter Sustaining Voltage(1)
(I C = 10mAdc, I B = 0)
Collecter-Base Breakdown Voltage
(I C = 10 µA, IB = 0)
Emitter-Base Breakdown Voltage
(I C = 10 µA, IB = 0)
Collector Cutoff Current
(V CB = 20 Vdc)
Collector Emitter Cutoff Current
(V CE = 10 Vdc, V BE = 0.25Vdc)
SYMBOL
MIN.
BVCES
MAX.
UNIT
40
--
Vdc
BVCEO
15
--
Vdc
BVCBO
40
--
Vdc
BVEBO
4.5
--
Vdc
ICES
--
0.4
µAdc
ICEX
---
0.3
30
µAdc
IEBO
hFE
--
0.25
µAdc
--
40
20
40
30
20
120
--120
120
120
-----
0.20
0.30
0.25
0.45
@150C
Emitter Base Cutoff Current
(V EB = 4 Vdc )
D.C. Current Gain
(I C = 10 mAdc, V CE = 1.0 Vdc)
(I C = 10 mAdc, V CE = 1.0 Vdc) @ -55C
(I C = 10 mAdc, V CE = 0.35 Vdc)
(I C = 30 mAdc, V CE = 0.4 Vdc)
(I C = 100 mAdc, V CE = 1.0 Vdc)
Collector-Emitter Saturation Voltage(1)
(I C = 10 mAdc, I B = 1.0 mAdc)
o
(I C = 10mAdc, I B = 1.0 mAdc, T A = + 125 C)
(I C = 30 mAdc, I B = 3.0 mAdc)
(I C = 100 mAdc, I B = 10 mAdc)
Base-Emitter Saturation Voltage(1)
(I C = 10 mAdc, I B = 1.0 mAdc)
o
(I C = 10 mAdc, I B = 1.0 mAdc, T A = + 125 C)
o
(I C = 10 mAdc, I B 1.0 mAdc, T A = -55 C)
(I C = 30 mAdc, I B = 3.0 mAdc)
(I C = 100 mAdc, I B = 10 mAdc)
Small-signal short-circuit forward-current transfer ratio
(I C = 10 mAdc, V CE = 10 Vdc, f = 100 MHz)
Output Capacitance
(V CB = 5.0 Vdc, I E = 0, f = 1.0 MHz)
Input Capacitance
(V EB = 1.0 Vdc, I C = 0, f = 1.0 MHz)
Switching Speeds, Turn-on Time
Storage Time
Turn-on Time
Turn-off Time
(1) Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0 %.
Datasheet# MSC0277A 5/19/97
TYP.
Vdc
VCE(Sat)
Vdc
VBE(Sat)
0.70
0.59
----
0.85
-1.02
0.9
1.20
5
10
--
4.0
--
5.0
----
13
12
18
/hfe/
pf
COBO
pf
CIBO
ns
ts
ton
toff