MMBL914H * “G” Lead(Pb)-Free 1 2 SOD-323 WEITRON http://www.weitron.com.tw MMBL914H Maximum Ratings Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc IFM(Surge) 500 mAdc Symbol Max Unit Total Device Dissipation FR-5 Board TA=25 C Derate Above 25 C PD 225 1.8 mW mW/ C Thermal Resistance, Junction to Ambient R qJA 556 C/W 300 mW 2.4 mW/ C 417 C/W Peak Forward Surge Current Thermal Characteristics Characterictics Total Device Dissipation Alumina Substrate,(2)TA=25 C Derate Above 25 C Thermal Resistance, Junction to Ambient Junction and Storage Temperature PD R qJA TJ, Tstg -55 to + 150 C Electrical Characteristics (TA=25 C Unless Otherwise note) Characterictics Symbol Min Max Unit Reverse Breakdown Votalge (IR=100µAdc) V(BR) 100 Forward Voltage(IF=10mAdc) VF 1000 mVdc IR 0.025 5.0 µAdc CT 4.0 pF trr 4.0 ns Off Characteristics Reverse Voltage Leakage Current (VR=20Vdc) (VR=75Vdc) Diode Capacitance (VR=0, f=1.0MHz) Revarse Recover Time (IF=IR=10mAdc) 1. FR-5=1.0x0.75x0.062 in Vcc 2.Alumina=0.4x0.3x0.024 in. 99.5% alumina. Device Marking Item MMBL914H WEITRON http://www.weitron.com.tw Marking 5D Eqivalent Circuitdiagram 1 2 MMBL914H 820 +10V 2.0K IF tp tr 0.1µF 100 µH IF t trr 10% 0.1µF D.U.T. t 90% 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE VR IR(REC)=1.0mA IR INPUT SIGNAL OUTPUT PULSE (IF=IR=10mA, MEASURED AT IR(REC)=1.0mA Notes:1. A 2.0 k variable resistor for a Forward Current (IF) 0f 10 mA 2. Input pules is adjusted so IR(peak) is equal to 10 mA » 3. tp trr F igure 1. R ec overy T ime E quivalent T es t C irc uit 10 IR, REVERSE CURRENT (µA) IF, FORWARD CURRENT (mA) 100 TA=85 C 10 TA= -40 C 1.0 0.1 TA=25 C 0.2 0.4 0.6 0.8 1.0 1.2 TA=150 C TA=125 C 1.0 TA=85 C 0.1 TA=55 C 0.01 0.001 TA=25 C 0 10 VF, FORWARD VOLTAGE (VOLTS) 20 Figure 2. Forward Voltage Figure 3. Leakage Current CD, DIODE CAPACITANCE (pF) 0.68 0.64 0.60 0.56 0.52 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance WEITRON http://www.weitron.com.tw 30 VR, REVERSE VOLTAGE (VOLTS) 8 40 50