P0903BSG N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-263 (D2PAK) Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 9.5mΩ 50A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage TC = 25 °C Continuous Drain Current Pulsed Drain Current TC = 100 °C Repetitive Avalanche Energy VGS ±20 V 50 35 200 IAR 40 L = 0.1mH EAS 250 L = 0.05mH EAR 8.6 TC = 25 °C Power Dissipation UNITS IDM Avalanche Current 2 LIMITS ID 1 Avalanche Energy SYMBOL Operating Junction & Storage Temperature Range 1 Lead Temperature ( /16” from case for 10 sec.) mJ 50 PD TC = 100 °C A W 30 Tj, Tstg -55 to 150 TL 275 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Case RθJC 2.5 Junction-to-Ambient RθJA 62.5 Case-to-Heatsink RθCS UNITS °C / W 0.6 1 Pulse width limited by maximum junction temperature. Duty cycle ≤ 1％ 2 ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 25 VGS(th) VDS = VGS, ID = 250µA 1 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±250 Zero Gate Voltage Drain Current IDSS VDS = 20V, VGS = 0V 25 VDS = 20V, VGS = 0V, TC = 125 °C 250 Gate Threshold Voltage 1 1.6 3 V nA µA Jun-29-2004 P0903BSG N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM On-State Drain Current1 ID(ON) Drain-Source On-State Resistance1 RDS(ON) Forward Transconductance1 VDS = 10V, VGS = 10V gfs TO-263 (D2PAK) Lead-Free 50 A VGS = 4.5V, ID = 20A 11 16 VGS = 10V, ID = 25A 7.5 9.5 VDS = 10V, ID = 25A 32 mΩ S DYNAMIC Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Total Gate Charge 2 Gate-Source Charge Gate-Drain Charge 2 2 Turn-On Delay Time 2 Rise Time2 Turn-Off Delay Time2 Fall Time2 1200 1800 VGS = 0V, VDS = 15V, f = 1MHz 600 1000 Crss 350 500 Qg 25 50 Qgs VDS = 10V, VGS = 10V, 15 Qgd ID = 25A 10 td(on) nC 6 16 tr VDS = 15V, RL = 1Ω 120 250 td(off) ID ≅ 50A, VGS = 10V, RGEN = 24Ω 40 90 105 200 tf pF nS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) Continuous Current IS 50 Pulsed Current3 ISM 150 Forward Voltage1 VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS = 25A, VGS = 0V 0.9 trr IRM(REC) V 70 nS 200 A 0.043 µC IF = IS, dlF/dt = 100A / µS Qrr 1.3 A 1 Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2％. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. 2 REMARK: THE PRODUCT MARKED WITH “P0903BSG”, DATE CODE or LOT # Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name. 2 Jun-29-2004 NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P0903BSG TO-263 (D2PAK) Lead-Free TYPICAL CHARACTERISTICS 3 Jun-29-2004 NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor 4 P0903BSG TO-263 (D2PAK) Lead-Free Jun-29-2004 N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM P0903BSG TO-263 (D2PAK) Lead-Free TO-263 (D2PAK) MECHANICAL DATA mm Min. Typ. Max. A 14.5 15 15.8 B 4.2 C 1.20 Dimension Min. Typ. Max. H 1.0 1.5 1.8 4.7 I 9.8 1.35 J 6.5 K 1.5 2.8 D 9 0.203 M 4.83 9.5 N 1.4 5.08 5.33 E A F G L H M 3 8.5 0.7 2 G L 10.3 C -0.102 0.5 J F 0.4 B 0.3 I E mm 1 Dimension K 5 Jun-29-2004