z-s?=‘= .---= - = -M= ZF an AMP company * 3 = = - Radar Pulsed Power Transistor, 135W, 20~s Pulse, 1% Duty PH2931 -I 3% 2.9 - 3.1 GHz Features NPN Silicon Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency InterdigitatedGeometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Hermetic‘ FleWCeramic Package Matching Absolute Maximum Ratinas at 25°C 1 Symbol I Parameter 1 Rating 1 Units Collector-EmitterVoltage V CES 80 V Emitter-Base V ES0 3.0 V ‘c 12 A 580 W Voltage Collector Current (Peak) Total Power Dissipation I I JunctionTemperature T, 200 “C StorageTemperature T STG -65 to +200 “C .060i.DOE f (1.52’.05) UNLESS 9-228 North I .003~.031 P TOT Electrical Characteristics C+!:TiER OTELRWISE NDTE% TOLERANCES ARE INCHES (M,LLIMET~~S t.005’ = 13MM) at 25°C Specifications Subject to Change Without Notice. M/A-COM, inc. America: Tel. (800) 366-2266 Fax (800) 618-8883 n Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 n Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 WWW.ALLDATASHEET.COM Copyright © Each Manufacturing Company. All Datasheets cannot be modified without permission. This datasheet has been download from : www.AllDataSheet.com 100% Free DataSheet Search Site. Free Download. No Register. Fast Search System. www.AllDataSheet.com