TI TS5A63157DCKR

TS5A63157
www.ti.com................................................................................................................................................... SCDS203A – DECEMBER 2005 – REVISED JULY 2009
12-Ω SPDT ANALOG SWITCH
5-V/3.3-V SINGLE-CHANNEL 2:1 MULTIPLEXER/DEMULTIPLEXER
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APPLICATIONS
•
•
•
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Sample-and-Hold Circuits
Battery-Powered Equipment
Audio and Video Signal Routing
Communication Circuits
DESCRIPTION
The TS5A63157 is a single-pole, double-throw
(SPDT) analog switch designed to operate from
1.65 V to 5.5 V. This device can handle both digital
and analog signals. Signals up to V+ (peak) can be
transmitted in either direction.
TI has integrated overshoot and undershoot
protection circuitry. The TS5A63157 senses
overshoot and undershoot events at the I/Os and
responds by preventing voltage differentials from
developing and turning the switch on.
SOT-23 OR SC-70 PACKAGE
(TOP VIEW)
NO 1
YEP OR YZP PACKAGE
(BOTTOM VIEW)
6 IN
GND 2
5
V+
NC 3
4
COM
NC
3
GND
2
NO
1
IE
W
Overshoot and Undershoot Voltage Protection
Isolation in Powered-Off Mode, V+ = 0
Specified Break-Before-Make Switching
Low ON-State Resistance (12 Ω)
Control Inputs Are 5-V Tolerant
Low Charge Injection
Excellent ON-State Resistance Matching
Low Total Harmonic Distortion (THD)
1.65-V to 5.5-V Single-Supply Operation
Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
ESD Performance Tested Per JESD 22
– 2000-V Human-Body Model (A114-B,
Class II)
– 1000-V Charged-Device Model (C101)
EV
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•
•
•
•
•
•
•
•
•
2
PR
FEATURES
1
4
COM
5
V+
6
IN
SUMMARY OF CHARACTERISTICS
V+ = 5 V, TA = 25°C
Single 2:1 Multiplexer/
Demultiplexer (1 × SPDT)
Configuration
Number of channels
1
12 Ω
ON-state resistance (ron)
0.15 Ω
ON-state resistance match (Δron)
6Ω
ON-state resistance flatness (ron(flat))
Turn-on/turn-off time (tON/tOFF)
5.7 ns/3.8 ns
Break-before-make time (tBBM)
0.5 ns
Charge injection (QC)
7 pC
Bandwidth (BW)
250 MHz
OFF isolation (OISO)
–57 dB at 10 MHz
Crosstalk (XTALK)
–54 dB at 10 MHz
Total harmonic distortion (THD)
0.01%
Leakage current (INO(OFF)/INC(OFF))
±1 µA
Power-supply current (I+)
10 µA
Undershoot protection
–2 V
Overshoot protection
V+ + 2 V
6-pin SOT-23, SC-70, and
DSBGA
Package options
FUNCTION TABLE
IN
NC TO COM,
COM TO NC
NO TO COM,
COM TO NO
L
ON
OFF
H
OFF
ON
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NanoStar, NanoFree are trademarks of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2005–2009, Texas Instruments Incorporated
TS5A63157
SCDS203A – DECEMBER 2005 – REVISED JULY 2009................................................................................................................................................... www.ti.com
ORDERING INFORMATION (1)
–40°C to 85°C
(1)
(2)
(3)
(4)
ORDERABLE
PART NUMBER
PACKAGE (2)
TA
TOP-SIDE
MARKING (3)
NanoStar™ – WCSP (DSBGA)
0.23-mm Large Bump – YEP
Tape and reel
TS5A63157YEPR (4)
NanoFree™ – WCSP (DSBGA)
0.23-mm Large Bump – YZP (Pb-free)
Tape and reel
TS5A63157YZPR (4)
SOT (SOT-23) – DBV
Tape and reel
TS5A63157DBVR
JBE_
SOT (SC-70) – DCK
Tape and reel
TS5A63157DCKR
J7_
PREVIEW
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.
DBV/DCK: The actual top-side marking has one additional character that designates the wafer faab/assembly site.
YEP/YZP: The actual top-side marking has three preceding characters to denote year, month, and sequence code, and one following
character to designate the wafer fab/assembly site. Pin 1 identifier indicates solder-bump composition (1 = SnPb, • = Pb-free).
Package preview
PIN DESCRIPTION
NO.
2
NAME
DESCRIPTION
1
NO
Normally open
2
GND
Digital ground
3
NC
4
COM
5
V+
Power supply
6
IN
Digital control to connect COM to NO or NC
Normally closed
Common
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Copyright © 2005–2009, Texas Instruments Incorporated
Product Folder Link(s): TS5A63157
TS5A63157
www.ti.com................................................................................................................................................... SCDS203A – DECEMBER 2005 – REVISED JULY 2009
ABSOLUTE MINIMUM AND MAXIMUM RATINGS (1) (2)
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
V+
Supply voltage range (3)
–0.5
6.5
V
VNO
VNC
VCOM
Analog voltage range (3) (4) (5)
–0.5
V+ + 0.5
V
IK
Analog port diode current
VNC, VNO, VCOM < 0 or VNO, VNC, VCOM > V+
–50
50
mA
INO
INC
ICOM
On-state switch current
VNC, VNO, VCOM = 0 to V+
–50
50
mA
VI
Digital input voltage range (3) (4)
–0.5
6.5
V
IIK
Digital input clamp current
I+
Continuous current through V+
–100
100
mA
IGND
Continuous current through GND
–100
100
mA
VI < 0
Tstg
(1)
(2)
(3)
(4)
(5)
(6)
(7)
Package thermal impedance
mA
(6)
206
DCK package (6)
252
YEA/YZA package (6)
143
YEP/YZP package (7)
123
DBV package
θJA
–50
Storage temperature range
–65
UNIT
150
°C/W
°C
Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
All voltages are with respect to ground, unless otherwise specified.
The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
This value is limited to 5.5 V maximum.
The package thermal impedance is calculated in accordance with JESD 51-7.
The package thermal impedance is calculated in accordance with JESD 51-5.
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TS5A63157
SCDS203A – DECEMBER 2005 – REVISED JULY 2009................................................................................................................................................... www.ti.com
ELECTRICAL CHARACTERISTICS FOR 5-V SUPPLY
V+ = 4.5 V to 5.5 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
UNIT
Analog Switch
Analog signal
range
VCOM, VNO,
VNC
0
Voltage
undershoot
VIKU
0 ≥ (INC, INO, or ICOM) ≥ –50 mA
Peak ON-state
resistance
rpeak
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –30 mA,
Switch ON,
See Figure 13
VNO or VNC = 0,
ICOM = 30 mA
ON-state
resistance
ron
5.5 V
25°C
Full
4
Full
VNO or VNC = 2.4 V,
ICOM = –30 mA
Switch ON,
See Figure 13
25°C
Full
4
4.5 V
VNO or VNC = 3.15 V,
ICOM = –30 mA,
Switch ON,
See Figure 13
ON-state
resistance
flatness
ron(flat)
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –30 mA,
Switch ON,
See Figure 13
INC(OFF),
INO(OFF)
VNC or VNO = 0 to V+,
VCOM = V+ to 0
Switch OFF,
See Figure 14
25°C
VNC or VNO = 0 to 5.5 V,
VCOM = 5.5 V to 0,
Switch OFF,
See Figure 14
25°C
INC(PWROFF),
INOPWROFF)
COM
OFF leakage
current
ICOM(PWROFF)
NC, NO
ON leakage
current
COM
ON leakage
current
VCOM = 0 to 5.5 V,
VNC or VNO = 5.5 V to 0,
Switch ON,
See Figure 14
INC(ON),
INO(ON)
VNC or VNO = 0 to V+,
VCOM = Open,
Switch ON,
See Figure 15
ICOM(ON)
VNC or VNO = Open,
VCOM = 0 to V+,
Switch ON,
See Figure 15
Full
Full
10
0.1
0.14
1.5
4.5 V
0.001
5.5 V
0.15
0
Ω
Ω
0.03
0.05
1
µA
5
0.2
0
1
10
0.001
5.5 V
0.01
0.02
25°C
Full
Ω
2
4
25°C
Full
8
0.15
25°C
Full
Ω
6.5
5.5
4.5 V
25°C
Full
11
12
25°C
Full
V
10
Full
Δron
–2
8
25°C
ON-state
resistance
match
between
channels
V
13
25°C
VNO or VNC = 4.5 V,
ICOM = –30 mA
NC, NO
OFF leakage
current
4.6
4.5 V
V+
0.003
5.5 V
0.03
0.05
µA
µA
µA
Digital Control Input (IN)
Input logic
high
VIH
Full
V+
× 0.7
5.5
V
Input logic low
VIL
Full
0
V+
× 0.3
V
Input leakage
current
IIH, IIL
4
25°C
VI = 5.5 V or 0
Full
Submit Documentation Feedback
5.5 V
0.05
0.1
0.02
µA
Copyright © 2005–2009, Texas Instruments Incorporated
Product Folder Link(s): TS5A63157
TS5A63157
www.ti.com................................................................................................................................................... SCDS203A – DECEMBER 2005 – REVISED JULY 2009
ELECTRICAL CHARACTERISTICS FOR 5-V SUPPLY (continued)
V+ = 4.5 V to 5.5 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
25°C
5V
2
3.4
5
Full
4.5 V to
5.5 V
2
25°C
5V
1
Full
4.5 V to
5.5 V
1
UNIT
Dynamic
Turn-on time
tON
VCOM = V+ or GND,
RL = 500 Ω,
CL = 50 pF,
See Figure 17
Turn-off time
tOFF
VCOM = V+ or GND,
RL = 500 Ω,
CL = 50 pF,
See Figure 17
Output voltage
during
undershoot
VOUTU
See Figure 18
Output voltage
during
overshoot
VOUTO
See Figure 18
Break-beforemake time
tBBM
VNC = VNO = V+/2,
RL = 50 Ω,
CL = 50 pF,
See Figure 19
Charge
injection
QC
VGEN = 0,
RGEN = 0,
2.5
5.5
2.8
ns
3.4
3.8
VOH
– 0.3
ns
V
VOL
+ 0.3
2
5
12
V
25°C
5V
0.5
Full
4.5 V to
5.5 V
0.5
CL = 0.1 nF,
See Figure 23
25°C
5V
–21
pC
14
ns
NC, NO
OFF
capacitance
CNC(OFF),
CNO(OFF)
VNC or VNO = V+ or GND,
Switch OFF,
See Figure 16
25°C
5V
5
pF
NC, NO
ON
capacitance
CNC(ON),
CNO(ON)
VNC or VNO = V+ or GND,
Switch ON,
See Figure 16
25°C
5V
14.5
pF
COM
ON
capacitance
CCOM(ON)
VCOM = V+ or GND,
Switch ON,
See Figure 16
25°C
5V
14.5
pF
Digital input
capacitance
CI
VI = V+ or GND,
See Figure 16
25°C
5V
2.5
pF
Bandwidth
BW
RL = 50 Ω,
Switch ON,
See Figure 20
25°C
5V
371
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 10 MHz,
Switch OFF,
See Figure 21
25°C
5V
–61
dB
Crosstalk
XTALK
RL = 50 Ω,
f = 10 MHz,
Switch ON,
See Figure 22
25°C
5V
–61
dB
Total harmonic
distortion
THD
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 24
25°C
5V
0.06
%
VI = V+ or GND,
Switch ON or OFF
Supply
Positive
supply current
I+
25°C
Full
5.5 V
0.01
0.1
0.75
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SCDS203A – DECEMBER 2005 – REVISED JULY 2009................................................................................................................................................... www.ti.com
ELECTRICAL CHARACTERISTICS FOR 3.3-V SUPPLY
V+ = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
UNIT
Analog Switch
Analog signal
range
VCOM, VNO,
VNC
0
Voltage
undershoot
VIKU
0 ≥ (INC, INO, or ICOM) ≥ –50 mA
Peak ON-state
resistance
rpeak
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –24 mA,
ON-state
resistance
VNO or VNC = 3 V,
ICOM = –24 mA
ON-state
resistance
flatness
NC, NO
OFF leakage
current
Switch ON,
See Figure 13
ron
Δron
3.6 V
25°C
Full
Full
25°C
6.4
3V
4.8
3V
ron(flat)
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –24 mA,
Switch ON,
See Figure 13
INC(OFF),
INO(OFF)
VNC or VNO = 0 to V+,
VCOM = V+ to 0
Switch OFF,
See Figure 14
25°C
25°C
INC(PWROFF),
INOPWROFF)
VNC or VNO = 0 to 3.6 V,
VCOM = 3.6 V to 0,
Switch OFF,
See Figure 14
COM
OFF leakage
current
ICOM(PWROFF)
VCOM = 0 to 3.6 V,
VNC or VNO = 3.6 V to 0,
Switch ON,
See Figure 14
NC, NO
ON leakage
current
INC(ON),
INO(ON)
VNC or VNO = 0 to V+,
VCOM = Open,
Switch ON,
See Figure 15
COM
ON leakage
current
ICOM(ON)
VNC or VNO = Open,
VCOM = 0 to V+,
Switch ON,
See Figure 15
Full
6.3
12
0.1
0.2
Full
Full
3V
0.2
2.8
3V
0
3.6 V
0
0.2
0
0.5
5
0.001
3.6 V
0.01
0.02
25°C
Full
0.50
µA
2
25°C
Full
Ω
0.03
0.05
0.15
Ω
4
7
25°C
Full
Ω
15
25°C
Full
Ω
8
10
Full
Switch ON,
See Figure 13
14
18
25°C
VNO or VNC = 2.1 V,
ICOM = –24 mA,
V
V
25°C
VNO or VNC = 0,
ICOM = 24 mA
ON-state
resistance
match
between
channels
Switch ON,
See Figure 13
V+
0.003
3.6 V
0.03
0.05
µA
µA
µA
Digital Control Input (IN)
Input logic
high
VIH
Full
Input logic low
VIL
Full
Input leakage
current
IIH, IIL
6
25°C
VI = 5.5 V or 0
Full
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3.6 V
V+
× 0.7
5.5
0
V+
× 0.3
0.005
0.01
0.02
V
V
µA
Copyright © 2005–2009, Texas Instruments Incorporated
Product Folder Link(s): TS5A63157
TS5A63157
www.ti.com................................................................................................................................................... SCDS203A – DECEMBER 2005 – REVISED JULY 2009
ELECTRICAL CHARACTERISTICS FOR 3.3-V SUPPLY (continued)
V+ = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
25°C
3.3 V
2
4.3
6.6
Full
3 V to
3.6 V
2
25°C
3.3 V
1
Full
3 V to
3.6 V
1
UNIT
Dynamic
Turn-on time
tON
VCOM = V+ or GND,
RL = 500 Ω,
CL = 50 pF,
See Figure 17
Turn-off time
tOFF
VCOM = V+ or GND,
RL = 500 Ω,
CL = 50 pF,
See Figure 17
Output voltage
during
undershoot
VOUTU
See Figure 18
Output voltage
during
overshoot
VOUTO
See Figure 18
Break-beforemake time
tBBM
VNC = VNO = V+/2,
RL = 50 Ω,
CL = 50 pF,
See Figure 19
Charge
injection
QC
VGEN = 0,
RGEN = 0,
2.5
7
3.3
ns
6.3
7
VOH
– 0.3
ns
V
VOL
+ 0.3
2
7
17
V
25°C
3.3 V
0.5
Full
3 V to
3.6 V
0.5
CL = 0.1 nF,
See Figure 23
25°C
3.3 V
–11.5
pC
19.5
ns
NC, NO
OFF
capacitance
CNC(OFF),
CNO(OFF)
VNC or VNO = V+ or GND,
Switch OFF,
See Figure 16
25°C
3.3 V
5
pF
NC, NO
ON
capacitance
CNC(ON),
CNO(ON)
VNC or VNO = V+ or GND,
Switch ON,
See Figure 16
25°C
3.3 V
15
pF
COM
ON
capacitance
CCOM(ON)
VCOM = V+ or GND,
Switch ON,
See Figure 16
25°C
3.3 V
15
pF
Digital input
capacitance
CI
VI = V+ or GND,
See Figure 16
25°C
3.3 V
2.5
pF
Bandwidth
BW
RL = 50 Ω,
Switch ON,
See Figure 20
25°C
3.3 V
370
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 10 MHz,
Switch OFF,
See Figure 21
25°C
3.3 V
–60
dB
Crosstalk
XTALK
RL = 50 Ω,
f = 10 MHz,
Switch ON,
See Figure 22
25°C
3.3 V
–60
dB
Total harmonic
distortion
THD
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 24
25°C
3.3 V
0.1
%
VI = V+ or GND,
Switch ON or OFF
Supply
Positive
supply current
I+
25°C
Full
3.6 V
0.05
0.1
0.6
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SCDS203A – DECEMBER 2005 – REVISED JULY 2009................................................................................................................................................... www.ti.com
ELECTRICAL CHARACTERISTICS FOR 2.5-V SUPPLY
V+ = 2.3 V to 2.7 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
UNIT
Analog Switch
Analog signal
range
VCOM, VNO,
VNC
0
Voltage
undershoot
VIKU
0 mA ≥ (INC, INO, or ICOM) ≥ –50 mA
Peak ON-state
resistance
rpeak
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –8 mA,
ON-state
resistance
ron
VNO or VNC = 2.3 V,
ICOM = –8 mA
Δron
ON-state
resistance
flatness
NC, NO
OFF leakage
current
2.7 V
25°C
Full
Switch ON,
See Figure 13
Full
25°C
9.2
2.3 V
5.4
ron(flat)
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –8 mA,
Switch ON,
See Figure 13
INC(OFF),
INO(OFF)
VNC or VNO = 0 to V+,
VCOM = V+ to 0,
Switch OFF,
See Figure 14
25°C
25°C
INC(PWROFF),
INOPWROFF)
VNC or VNO = 0 to 2.7 V,
VCOM = 2.7 V to 0,
Switch OFF,
See Figure 14
COM
OFF leakage
current
ICOM(PWROFF)
VCOM = 0 to 2.7 V,
VNC or VNO = 2.7 V to 0,
Switch ON,
See Figure 14
NC, NO
ON leakage
current
INC(ON),
INO(ON)
VNC or VNO = 0 to V+,
VCOM = Open,
Switch ON,
See Figure 15
COM
ON leakage
current
ICOM(ON)
VNC or VNO = Open,
VCOM = 0 to V+,
Switch ON,
See Figure 15
Full
8.6
15.5
0.05
0.3
Full
Full
2.3 V
0.5
5
2.3 V
0
2.7 V
0
0.2
0
0.5
1
0.001
2.7 V
0.01
0.02
25°C
Full
0.50
µA
0.75
25°C
Full
Ω
0.03
0.05
0.15
Ω
9
15
25°C
Full
Ω
25
25°C
Full
Ω
8.5
12
2.3 V
Full
Switch ON,
See Figure 13
30
35
25°C
VNO or VNC = 1.6 V,
ICOM = –8 mA,
V
V
25°C
VNO or VNC = 0,
ICOM = 8 mA
ON-state
resistance
match
between
channels
Switch ON,
See Figure 13
V+
0.003
2.7 V
0.03
0.05
µA
µA
µA
Digital Control Input (IN)
Input logic
high
VIH
Full
V+
× 0.75
Input logic low
VIL
Full
0
Input leakage
current
IIH, IIL
8
25°C
VI = 5.5 V or 0
Full
Submit Documentation Feedback
2.7 V
0.005
5.5
V
V+
× 0.25
V
0.01
0.02
µA
Copyright © 2005–2009, Texas Instruments Incorporated
Product Folder Link(s): TS5A63157
TS5A63157
www.ti.com................................................................................................................................................... SCDS203A – DECEMBER 2005 – REVISED JULY 2009
ELECTRICAL CHARACTERISTICS FOR 2.5-V SUPPLY (continued)
V+ = 2.3 V to 2.7 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
25°C
2.5 V
3
5.8
9.6
Full
2.3 V to
2.7 V
3
25°C
2.5 V
1.5
Full
2.3 V to
2.7 V
1.5
UNIT
Dynamic
Turn-on time
tON
VCOM = V+ or GND,
RL = 500 Ω,
CL = 50 pF,
See Figure 17
Turn-off time
tOFF
VCOM = V+ or GND,
RL = 500 Ω,
CL = 50 pF,
See Figure 17
Output voltage
during
undershoot
VOUTU
See Figure 18
Output voltage
during
overshoot
VOUTO
See Figure 18
Break-beforemake time
tBBM
VNC = VNO = V+/2,
RL = 50 Ω,
CL = 50 pF,
See Figure 19
Charge
injection
QC
VGEN = 0,
RGEN = 0,
2.5
12
4.5
ns
7.3
7.5
VOH
– 0.3
ns
V
VOL
+ 0.3
2
10
25
V
25°C
2.5 V
0.5
Full
2.3 V to
2.7 V
0.5
CL = 0.1 nF,
See Figure 23
25°C
2.5 V
–8
pC
28.5
ns
NC, NO
OFF
capacitance
CNC(OFF),
CNO(OFF)
VNC or VNO = V+ or GND,
Switch OFF,
See Figure 16
25°C
2.5 V
5
pF
NC, NO
ON
capacitance
CNC(ON),
CNO(ON)
VNC or VNO = V+ or GND,
Switch ON,
See Figure 16
25°C
2.5 V
15
pF
COM
ON
capacitance
CCOM(ON)
VCOM = V+ or GND,
Switch ON,
See Figure 16
25°C
2.5 V
15
pF
Digital input
capacitance
CI
VI = V+ or GND,
See Figure 16
25°C
2.5 V
2.5
pF
Bandwidth
BW
RL = 50 Ω,
Switch ON,
See Figure 20
25°C
2.5 V
367
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 10 MHz,
Switch OFF,
See Figure 21
25°C
2.5 V
–60
dB
Crosstalk
XTALK
RL = 50 Ω,
f = 10 MHz,
Switch ON,
See Figure 22
25°C
2.5 V
–60
dB
Total harmonic
distortion
THD
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 24
25°C
2.5 V
0.15
%
VI = V+ or GND,
Switch ON or OFF
Supply
Positive
supply current
I+
25°C
Full
2.7 V
0.05
0.1
0.5
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ELECTRICAL CHARACTERISTICS FOR 1.8-V SUPPLY
V+ = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
UNIT
Analog Switch
Analog signal
range
VCOM, VNO,
VNC
0
Voltage
undershoot
VIKU
0 ≥ (INC, INO, or ICOM) ≥ –50 mA
Peak ON-state
resistance
rpeak
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –4 mA,
ON-state
resistance
Switch ON,
See Figure 13
1.95 V
25°C
Full
ron
VNO or VNC = 1.65 V,
ICOM = –4 mA
Switch ON,
See Figure 13
Full
25°C
Δron
VNO or VNC = 1.15 V,
ICOM = –4 mA,
Switch ON,
See Figure 13
ON-state
resistance
flatness
ron(flat)
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –4 mA,
Switch ON,
See Figure 13
INC(OFF),
INO(OFF)
VNC or VNO = 0 to V+,
VCOM = V+ to 0,
Switch OFF,
See Figure 14
25°C
25°C
NC, NO
OFF leakage
current
13.8
1.65 V
5.9
12.8
40
0.1
0.5
INC(PWROFF),
INOPWROFF)
VNC or VNO = 0 to 1.95 V,
VCOM = 1.95 V to 0,
Switch OFF,
See Figure 14
COM
OFF leakage
current
ICOM(PWROFF)
VCOM = 0 to 1.95 V,
VNC or VNO = 1.95 V to 0,
Switch ON,
See Figure 14
NC, NO
ON leakage
current
INC(ON),
INO(ON)
VNC or VNO = 0 to V+,
VCOM = Open,
Switch ON,
See Figure 15
COM
ON leakage
current
ICOM(ON)
VNC or VNO = Open,
VCOM = 0 to V+,
Switch ON,
See Figure 15
Full
Full
1.65 V
0.8
26.5
1.65 V
0
1.95 V
0
0.2
0
0.5
1
0.001
1.95 V
0.01
0.02
25°C
Full
0.50
µA
0.75
25°C
Full
Ω
0.03
0.05
0.15
Ω
60
80
25°C
Full
Ω
45
25°C
Full
Ω
15
15
1.65 V
25°C
Full
60
120
Full
ON-state
resistance
match
between
channels
V
V
25°C
VNO or VNC = 0,
ICOM = 4 mA
V+
0.003
1.95 V
0.03
0.05
µA
µA
µA
Digital Control Input (IN)
Input logic
high
VIH
Full
Input logic low
VIL
Full
Input leakage
current
IIH, IIL
10
25°C
VI = 5.5 V or 0
Full
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V+
× 0.75
5.5
V
0
V+
× 0.25
V
0.005
0.01
0.02
µA
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ELECTRICAL CHARACTERISTICS FOR 1.8-V SUPPLY (continued)
V+ = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
25°C
1.8 V
Full
1.65 V to
1.95 V
25°C
1.8 V
Full
1.65 V to
1.95 V
MIN
TYP
MAX
9.5
23
UNIT
Dynamic
Turn-on time
tON
VCOM = V+ or GND,
RL = 500 Ω,
CL = 50 pF,
See Figure 17
Turn-off time
tOFF
VCOM = V+ or GND,
RL = 500 Ω,
CL = 50 pF,
See Figure 17
Output voltage
during
undershoot
VOUTU
See Figure 18
Output voltage
during
overshoot
VOUTO
See Figure 18
Break-beforemake time
tBBM
VNC = VNO = V+/2,
RL = 50 Ω,
CL = 50 pF,
See Figure 19
Charge
injection
QC
VGEN = 0,
RGEN = 0,
24
5.9
10
12
2.5
ns
VOH
– 0.3
ns
V
VOL
+ 0.3
2
18
50
V
25°C
1.8 V
0.5
Full
1.65 V to
1.95 V
0.5
CL = 0.1 nF,
See Figure 23
25°C
1.8 V
–5
pC
55
ns
NC, NO
OFF
capacitance
CNC(OFF),
CNO(OFF)
VNC or VNO = V+ or GND,
Switch OFF,
See Figure 16
25°C
1.8 V
5.5
pF
NC, NO
ON
capacitance
CNC(ON),
CNO(ON)
VNC or VNO = V+ or GND,
Switch ON,
See Figure 16
25°C
1.8 V
15.5
pF
COM
ON
capacitance
CCOM(ON)
VCOM = V+ or GND,
Switch ON,
See Figure 16
25°C
1.8 V
15.5
pF
Digital input
capacitance
CI
VI = V+ or GND,
See Figure 16
25°C
1.8 V
2.5
pF
Bandwidth
BW
RL = 50 Ω,
Switch ON,
See Figure 20
25°C
1.8 V
369
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 10 MHz,
Switch OFF,
See Figure 21
25°C
1.8 V
–60
dB
Crosstalk
XTALK
RL = 50 Ω,
f = 10 MHz,
Switch ON,
See Figure 22
25°C
1.8 V
–60
dB
Total harmonic
distortion
THD
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 24
25°C
1.8 V
0.4
%
VI = V+ or GND,
Switch ON or OFF
Supply
Positive
supply current
I+
25°C
Full
1.95 V
0.05
0.06
0.3
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TYPICAL PERFORMANCE
60
50
ron (Ω)
40
30
V+ = 1.8 V
20
V+ = 2.5 V
V+ = 3.3 V V = 5 V
+
10
0
0
1
2
3
VCOM (V)
4
5
Figure 1. ron vs VCOM
12
855C
10
255C
ron (W)
8
–405C
6
4
2
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VCOM (V)
Figure 2. ron vs VCOM (V+ = 3 V)
9
85°C
8
7
ron (W)
6
25°C
5
4
–40°C
3
2
1
0
0
1
2
3
VCOM (V)
4
5
Figure 3. ron vs VCOM (V+ = 5 V)
12
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Leakage Current (nA)
TYPICAL PERFORMANCE (continued)
0.00500
0.00450
0.00400
0.00350
0.00300
0.00250
0.00200
0.00150
0.00100
0.00050
0.00000
−0.00050
COM (ON)
NO/NC (OFF)
NO/NC (ON)
−40
25
85
TA (°C)
Figure 4. Leakage Current vs Temperature (V+ = 5.5 V)
Charge Injection (pC)
20
V+ = 5 V
V+ = 3.3 V
V+ = 2.5 V
V+ = 1.8 V
10
0
−10
−20
0
1
2
3
4
Bias Voltage (V)
5
6
Figure 5. Charge Injection (QC) vs VCOM
14
tON
tON/tOFF (ns)
12
10
8
tOFF
6
4
2
0
0
1
2
3
4
5
6
V+ (V)
Figure 6. tON and tOFF vs Supply Voltage
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TYPICAL PERFORMANCE (continued)
4
tON
3
tON/tOFF (ns)
tOFF
2
1
0
−40
25
85
TA (5C)
Figure 7. tON and tOFF vs Temperature (V+ = 5 V)
Logic-Level Threshold (nA)
2.5
2.0
VIN Rising
1.5
VIN Falling
1.0
0.5
0.0
0
1
2
3
V+ (V)
4
5
6
Figure 8. Logic-Level Threshold vs V+
0
Gain (dB)
−1
−2
−3
−4
−5
−6
0.1
1
10
Frequency (MHz)
1000
100
Figure 9. Bandwidth (V+ = 3.3 V)
14
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TYPICAL PERFORMANCE (continued)
0
Attenuation (dB)
−20
−40
Crosstalk
−60
OFF Isolation
−80
−100
−120
0.1
1
10
100
1000
Frequency (MHz)
Figure 10. OFF Isolation and Crosstalk (V+ = 3.3 V)
0.064
THD + (%)
0.062
0.060
0.058
0.056
0.054
10
100
1K
Frequency (Hz)
10K
100K
Figure 11. Total Harmonic Distortion (THD) vs Frequency (V+ = 3.3 V)
250
200
ICC+ (nA)
150
100
50
0
−60
−40
−20
0
20
40
60
80
100
TA (5C)
Figure 12. Power-Supply Current vs Temperature (V+ = 5 V)
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PARAMETER DESCRIPTION
SYMBOL
VCOM
Voltage at COM
VNC
Voltage at NC
VNO
Voltage at NO
ron
Resistance between COM and NC or COM and NO ports when the channel is ON
rpeak
Peak on-state resistance over a specified voltage range
Δron
Difference of ron between channels in a specific device
ron(flat)
INC(OFF)
INC(PWROFF)
INO(OFF)
INO(PWROFF)
Difference between the maximum and minimum value of ron in a channel over the specified range of conditions
Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the OFF state
Leakage current measured at the NC port during the power-down condition, V+ = 0
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the OFF state
Leakage current measured at the NO port during the power-down condition, V+ = 0
INC(ON)
Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the ON state and the output
(COM) open
INO(ON)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the ON state and the output
(COM) open
ICOM(ON)
ICOM(PWROFF)
Leakage current measured at the COM port, with the corresponding channel (COM to NO or COM to NC) in the ON state
and the output (NC or NO) open
Leakage current measured at the COM port during the power-down condition, V+ = 0
VIH
Minimum input voltage for logic high for the control input (IN)
VIL
Maximum input voltage for logic low for the control input (IN)
VI
Voltage at the control input (IN)
IIH, IIL
Leakage current measured at the control input (IN)
tON
Turn-on time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output (COM or NO) signal when the switch is turning ON.
tOFF
Turn-off time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output (COM or NO) signal when the switch is turning OFF.
tBBM
Break-before-make time. This parameter is measured under the specified range of conditions and by the propagation
delay between the output of two adjacent analog channels (NC and NO) when the control signal changes state.
QC
Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (NO or COM)
output. This is measured in coulomb (C) and measured by the total charge induced due to switching of the control
input.Charge injection, QC = CL × ΔVCOM, CL is the load capacitance and ΔVCOM is the change in analog output voltage.
CNC(OFF)
Capacitance at the NC port when the corresponding channel (NC to COM) is OFF
CNO(OFF)
Capacitance at the NO port when the corresponding channel (NO to COM) is OFF
CNC(ON)
Capacitance at the NC port when the corresponding channel (NC to COM) is ON
CNO(ON)
Capacitance at the NO port when the corresponding channel (NO to COM) is ON
CCOM(ON)
CI
Capacitance at the COM port when the corresponding channel (COM to NC or COM to NO) is ON
Capacitance of control input (IN)
OISO
OFF isolation of the switch is a measurement of OFF-state switch impedance. This is measured in dB in a specific
frequency, with the corresponding channel (NC to COM or NO to COM) in the OFF state.
XTALK
Crosstalk is a measurement of unwanted signal coupling from an ON channel to an OFF channel (NC to NO or NO to
NC). This is measured in a specific frequency and in dB.
BW
Bandwidth of the switch. This is the frequency in which the gain of an ON channel is –3 dB below the DC gain.
THD
Total harmonic distortion is defined as the ratio of the root mean square (RMS) value of the second, third, and higher
harmonics to the magnitude of fundamental harmonic.
I+
16
DESCRIPTION
Static power-supply current with the control (IN) pin at V+ or GND
VOUTU
Output voltage during an undershoot event. This is measured by turning off a specific channel and applying an
undershoot voltage at the input of the switch.
VOUTO
Output voltage during an overshoot event. This is measured by turning off a specific channel and applying an overshoot
voltage at the input of the switch.
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PARAMETER MEASUREMENT INFORMATION
V+
VNC NC
COM
+
VCOM
VNO NO
Channel ON
r on +
VI
IN
ICOM
VCOM * VNO or VNC
W
I COM
VI = VIH or VIL
+
GND
Figure 13. ON-State Resistance (ron)
V+
VNC NC
COM
+
VCOM
+
VNO NO
IN
VI
OFF-State Leakage Current
Channel OFF
VI = VIH or VIL
+
GND
Figure 14. OFF-State Leakage Current
(INC(OFF), INC(PWROFF), INO(OFF), INO(PWROFF), ICOM(OFF), ICOM(PWROFF))
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PARAMETER MEASUREMENT INFORMATION (continued)
V+
VNC NC
COM
+
VCOM
VNO NO
ON-State Leakage Current
Channel ON
VI = VIH or VIL
IN
VI
+
GND
Figure 15. ON-State Leakage Current (ICOM(ON), INC(ON), INO(ON))
V+
Capacitance
Meter
VNC
NC
VNO
NO
VBIAS = V+ or GND
VI = V+ or GND
VCOM COM
VBIAS
VI
Capacitance is measured at NC,
NO, COM, and IN inputs during
ON and OFF conditions.
IN
GND
Figure 16. Capacitance (CIN, CCOM(ON), CNC(OFF), CNO(OFF), CNC(ON), CNO(ON))
18
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PARAMETER MEASUREMENT INFORMATION (continued)
V+
2 × V+
VNC or VNO
S1
RL
NC or NO
VCOM
CL
IN
VI
Logic
Input(1)
RL
CL
NC or NO
COM
RL
GND
V+
Logic Input
(VIN)
50%
50%
0V
tPZL
TEST
tON
tOFF
RL
CL
VCOM
S1
tPZH
500 Ω
50 pF
V+
GND
tPZL
500 Ω
50 pF
GND
2 y V+
tPHZ
500 Ω
50 pF
V+
GND
tPLZ
500 Ω
50 pF
GND
2 y V+
tPLZ
Switch Output
(VNC or VNO)
S1 at 2 × V+
VOH
50%
VOL + 0.3 V
VOL
tPZH
tPHZ
VOH
Switch Output
(VNC or VNO)
S1 at GND
(1)
Open
GND
50%
VOH − 0.3 V
0V
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns,
tf < 5 ns.
Figure 17. Turn-On (tON) and Turn-Off (tOFF) Time
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PARAMETER MEASUREMENT INFORMATION (continued)
V+
VTR
VNC or VNO
RL
VCOM
NC or NO
Switch
Input
NC or NO
COM
RL
CL
IN
VI
Switch Input and Output for Undershoot Test
GND
Switch Input
VNC or VNO
(Open Socket)
90 %
90 %
2 ns
5.5 V
2 ns
10 %
10 %
−2 V
20 ns
TEST
RL
CL
VTR
VOUTU
100 kΩ
10 pF
7V
VOUTO
100 kΩ
10 pF
GND
VI
Switch Output
(VOUTU)
VOH
VOH − 0.3
V+ or GND
Switch Input and Output for Overshoot Test
20 ns
Switch OFF
V+ or GND
Switch OFF
Switch Input
VNC or VNO
(Open Socket)
5.5 V
90 %
90 %
2 ns
2 ns
10 %
10 %
Switch Output
(VOUTO)
−2 V
VOL + 0.3
VOL
Figure 18. Undershoot and Overshoot Test
V+
NC or NO
V+
Logic
Input
(VI)
VNC or VNO
VCOM
50%
0
COM
NC or NO
CL(2)
VI
Logic
Input(1)
IN
RL
Switch
Output
(VCOM)
90%
90%
tBBM
VNC or VNO = V+/2
RL = 50 Ω
CL = 35 pF
GND
(1)
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns,
tf < 5 ns.
(2)
CL includes probe and jig capacitance.
Figure 19. Break-Before-Make (tBBM) Time
20
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PARAMETER MEASUREMENT INFORMATION (continued)
V+
Network Analyzer
50 W
VNC
NC
Channel ON: NC to COM
COM
Source
Signal
VCOM
VI = V+ or GND
NO
Network Analyzer Setup
IN
VI
50 W
Source Power = 0 dBm
(632-mV P-P at 50-W load)
+
GND
DC Bias = 350 mV
Figure 20. Bandwidth (BW)
V+
Network Analyzer
Channel OFF: NC to COM
50 W
VNC
NC
VI = V+ or GND
COM
Source
Signal
50 W
VCOM
NO
Network Analyzer Setup
IN
Source Power = 0 dBm
(632-mV P-P at 50-W load)
VI
50 W
+
GND
DC Bias = 350 mV
Figure 21. OFF Isolation (OISO)
V+
Network Analyzer
Channel ON: NC to COM
50 W
VNC
Channel OFF: NO to COM
NC
VCOM
Source
Signal
VNO
NO
VI
50 W
VI = V+ or GND
+
50 W
IN
GND
Network Analyzer Setup
Source Power = 0 dBm
(632-mV P-P at 50-W load)
DC Bias = 350 mV
Figure 22. Crosstalk (XTALK)
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PARAMETER MEASUREMENT INFORMATION (continued)
V+
RGEN
VGEN
ON
OFF
OFF V
IL
NC or NO
COM
+
VIH
Logic
Input
(VI)
VCOM
∆VCOM
VCOM
NC or NO
CL(2)
VI
VGEN = 0 to V+
IN
Logic
Input(1)
RGEN = 0
CL = 0.1 nF
QC = CL × ∆VCOM
VI = VIH or VIL
GND
(1)
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns,
tf < 5 ns.
(2)
CL includes probe and jig capacitance.
Figure 23. Charge Injection (QC)
Channel ON: COM to NO
VSOURCE = V+ P-P
VI = VIH or VIL
RL = 600 Ω
fSOURCE = 20 Hz to 20 kHz
CL = 50 pF
V+/2
V+
Audio Analyzer
RL
10 mF
Source
Signal
10 mF
NO
COM
NC
600 W
600 W
VI
CL(1)
IN
GND
600 W
(1)
CL includes probe and jig capacitance.
Figure 24. Total Harmonic Distortion (THD)
22
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Product Folder Link(s): TS5A63157
PACKAGE OPTION ADDENDUM
www.ti.com
11-Apr-2013
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
(2)
MSL Peak Temp
Op Temp (°C)
(3)
Top-Side Markings
(4)
TS5A63157DBVR
ACTIVE
SOT-23
DBV
6
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 85
(JBEF ~ JBER)
TS5A63157DBVRE4
ACTIVE
SOT-23
DBV
6
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 85
(JBEF ~ JBER)
TS5A63157DBVRG4
ACTIVE
SOT-23
DBV
6
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 85
(JBEF ~ JBER)
TS5A63157DCKR
ACTIVE
SC70
DCK
6
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 85
(J75 ~ J7F ~ J7R)
TS5A63157DCKRE4
ACTIVE
SC70
DCK
6
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 85
(J75 ~ J7F ~ J7R)
TS5A63157DCKRG4
ACTIVE
SC70
DCK
6
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 85
(J75 ~ J7F ~ J7R)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a
continuation of the previous line and the two combined represent the entire Top-Side Marking for that device.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
11-Apr-2013
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
11-Aug-2012
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
TS5A63157DBVR
SOT-23
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
DBV
6
3000
180.0
8.4
3.23
3.17
1.37
4.0
8.0
Q3
TS5A63157DBVR
SOT-23
DBV
6
3000
178.0
9.0
3.23
3.17
1.37
4.0
8.0
Q3
TS5A63157DCKR
SC70
DCK
6
3000
178.0
9.0
2.4
2.5
1.2
4.0
8.0
Q3
TS5A63157DCKR
SC70
DCK
6
3000
178.0
9.2
2.4
2.4
1.22
4.0
8.0
Q3
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
11-Aug-2012
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
TS5A63157DBVR
SOT-23
DBV
6
3000
202.0
201.0
28.0
TS5A63157DBVR
SOT-23
DBV
6
3000
180.0
180.0
18.0
TS5A63157DCKR
SC70
DCK
6
3000
180.0
180.0
18.0
TS5A63157DCKR
SC70
DCK
6
3000
180.0
180.0
18.0
Pack Materials-Page 2
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