IKSEMICON ILX3232TSD

TECHNICAL DATA
Interface Transceiver of RS-232 Standard
with One Supply Voltage
ILX3232
DESCRIPTION
The ILX3232 is a 3V powered EIA/TIA-232 and V.28/V.24 communication interface with low power
requirements, high data-rate capabilities. ILX3232 has a proprietary low dropout transmitter output stage
providing true RS-232 performance from 3 to 5.5V supplies. The device requires only four small 0.1 µF
standard external capacitors for operations from 3V supply.
The ILX3232 has two receivers and two drivers. The device is guaranteed to run at data rates of
250Kbps while maintaining RS-232 output levels. Typical applications are Notebook, Subnotebook and
Palmtop Computers, Battery Powered Equipment, Hand-Held Equipment, Peripherals and Printers.
FEATURES
• 300 µA SUPPLY CURRENT
• 120Kbps MINIMUM GUARENTEED DATA RATE
• 3V/µs MINIMUM GUARANTEED SLEW RATE
• ENHANCED ESD SPECIFICATIONS:
±15kV IEC1000-4-2 Air Discharge
• AVAILABLE IN DIP-16, SO-16,TSSOP16 AND
SOP16L(W)
TSSOP 16
SOP16L(W)
Ordering Information
ILX3232N Plastic DIP
ILX3232D
SOIC
ILX3232TSD
TSSOP
ILX3232DW
SOP(W)
ТА= from -40 to 85 оС
for all packages
PIN CONFIGURATION
January 2009, Ver. 04
ILX3232
PIN DESCRIPTION
PlN N°
SYMBOL
NAME AND FUNCTION
1
C1+
Positive Terminal for the first Charge Pump Capacitor
2
V+
3
C1
Doubled Voltage Terminal
Negative Terminal for the first Charge Pump Capacitor
4
C2+
5
C2
Positive Terminal for the second Charge Pump Capacitor
Negative Terminal for the second Charge Pump Capacitor
6
V-
7
T2OUT
Inverted Voltage Terminal
Second Transmitter Output Voltage
8
R2IN
9
R2OUT
Second Receiver Output Voltage
10
T2IN
Second Transmitter Input Voltage
First Transmitter Input Voltage
Second Receiver Input Voltage
11
T1IN
12
R1OUT
13
R1IN
14
T1OUT
15
GND
Ground
16
VCC
Supply Voltage
First Receiver Output Voltage
First Receiver Input Voltage
First Transmitter Output Voltage
ABSOLUTE MAXIMUM RATING
Symbol
Parameter
Value
Unit
VCC
Supply Voltage
-0.3 to 6
V
V+
Doubled Voltage Terminal
(VCC - 0.3) to 7
V
V-
Inverted Voltage Terminal
0.3 to -7
V
13
V
V+ +|V-|
TIN
Transmitter Input Voltage Range
RIN
Receiver Input Voltage Range
TOUT
ROUT
tSHORT
Transmitter Output Voltage Range
Receiver Output Voltage Range
Transmitter Output Short to GND Time
-0.3 to 6
V
± 25
V
± 13.2
V
-0.3 to (VCC + 0.3)
V
Continuous
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these
condition is not implied. V+ and V-can have a maximum magnitude of +7V, but their absolute addition can not exceed 13 V.
January 2009, Ver. 04
ILX3232
ELECTRICAL CHARACTERISTICS
(C1 - C4 = 0.1µF, VCC = 3V to 5.5V, TA = -40 to 85°C, unless otherwise specified.
Typical values are referred to TA = 25°C)
Symbol
Parameter
ISUPPLY
VCC Power Supply
Current
Test Conditions
Min.
Typ.
Max.
Unit
No Load
VCC = 3V ±10%
TA = 25°C
2.5
5
mA
No Load
VCC = 5V ±10%
TA = 25°C
6
10
mA
Typ.
Max.
Unit
0.8
LOGIC INPUT ELECTRICAL CHARACTERISTICS
(C1 - C4 = 0.1µF, VCC = 3V to 5.5V, TA = -40 to 85°C, unless otherwise specified.
Typical values are referred to TA = 25°C)
Symbol
VTIL
VTIH
Parameter
Test Conditions
Input Logic Threshold Low
Input Logic Threshold High
T-IN (Note 1)
VCC = 3.3V
VCC = 5V
T-IN
Min.
± 0.01
±1
V
V
V
µA
Min.
Typ.
Max.
Unit
VCC = 5.0V
±5
± 5.4
VCC = 3.0V
± 3.5
± 4.0
300
10M
2
2.4
Input Leakage Current
IIL
Note1: Transmitter input hysteresis is typically 250mV
TRANSMITTER ELECTRICAL CHARACTERISTICS
(C1 - C4 = 0.1µF tested at VCC = 3V to 5.5V, TA = -40 to 85°C, unless otherwise specified.
Typical values are referred to TA = 25°C)
Symbol
Parameter
Test Conditions
VTOUT
Output Voltage Swing
All Transmitter outputs are
loaded with 3KΩ to GND
RTOUT
ITSC
Transmitter Output
Resistance
Output Short Circuit
Current
VCC = V+ = V- = 0V
VOUT = ± 2V
VCC = 3V to 5V
VOUT = 0V
V
Ω
± 60
mA
Max.
Unit
25
V
RECEIVER ELECTRICAL CHARACTERISTICS
(C1 - C4 = 0.1µF tested at VCC = 3V to 5.5V, TA = -40 to 85°C, unless otherwise specified.
Typical values are referred to TA = 25°C)
Symbol
VRIN
VRIL
VRIH
Parameter
Receiver Input Voltage
Operating Range
RS-232 Input Threshold
Low
TA = 25°C
TA = 25°C
VCC = 3.3V
VCC = 5V
RS-232 Input Threshold
High
TA = 25°C
TA = 25°C
VCC = 3.3V
VCC = 5V
VRIHYS
Input Hysteresis
RRIN
VROL
Input Resistance
VROH
Test Conditions
TTL/CMOS Output Voltage
Low
TTL/CMOS Output Voltage
High
Min.
Typ.
-25
0.6
0.8
1.2
1.5
1.5
1.8
V
2.4
2.4
0.3
TA = 25°C
IOUT = 1.6mA
VCC = 3.3V
3
IOUT = 3.2mA
VCC = 5.5V
IOUT = -0.5mA
VCC = 3.3V
IOUT = -1mA
VCC = 5.5V
5
VCC-0.6 VCC-0.1
V
V
7
kΩ
0.4
V
V
January 2009, Ver. 04
ILX3232
TIMING CHARACTERISTICS
(C1 - C4 = 0.1µF, VCC = 3V to 5.5V, TA = -40 to 85°C, unless otherwise specified.
Typical values are referred to TA = 25°C)
Symbol
Parameter
DR
Data Transfer Rate
tPHLR
tPLHR
tPHLT
tPLHT
|tPHLR
- tPLHR|
|tPHLT
- tPLHT|
Propagation Delay Input
to Output
Propagation Delay Input
to Output
Receiver Propagation
Delay Difference
Transmitter Propagation
Delay Difference
SRT
Transition Slew Rate
Test Conditions
CL2= 1000pF
one trasmitter switching
RL = 3KΩ
Min.
Typ.
120
240
Max.
Unit
Kbps
RXIN = RXOUT
CL = 150pF
4.0
9.7
µs
RL = 3KΩ
CL = 2500pF
2.0
5.0
µs
RL = 3KΩ to 7KΩ VCC = 3.3V
TA = 25°C
measured from +3V to -3V or -3V to +3V
CL = 150pF to 1000pF
3
300
ns
300
ns
30
V/µs
Transmitter Skew is measured at the transmitter zero cross points
APPLICATION CIRCUITS
CAPACITANCE VALUE (µF)
VCC
C1
C2
C3
C4
Cbypass
3.0 to 5.5
0.1
0.1
0.1
0.1
0.1
January 2009, Ver. 04
ILX3232
TYPICAL OPERATING CHARACTERISTICS
(VCC = +3.3V, 240kbps data rate, 0.1μF capacitors, all transmitters loaded with 3kΩ, TA = +25°C, unless otherwise noted.)
TRANSMITTER OUTPUT VOLTAGE
vs. LOAD CAPACITANCE
SLEW RATE
vs. LOAD CAPACITANCE
SUPPLY CURRENT vs. LOAD CAPACITANCE
WHEN TRANSMITTING DATA
January 2009, Ver. 04
ILX3232
ESD PROTECTION
The ILX3232 incorporates ruggedized ESD cells on all driver output and receiver input pins. The
ESD structure is for rugged applications and environments sensitive to electro-static discharges and
associated transients. The ESD tolerance is at least ±15kV without damage or latch-up.
There are different methods of ESD testing applied:
a) MIL-STD-883, Method 3015.7
b) IEC1000-4-2 Air-Discharge
The Human Body Model has been the generally accepted ESD testing method for semiconductors.
This method is also specified in MIL-STD- 883, Method 3015.7 for ESD testing. The premise of this ESD test
is to simulate the human body’s potential to store electro-static energy and discharge it to an integrated
circuit. The simulation is performed by using a test model as shown in Figure 1. This method will test the IC’s
capability to withstand an ESD transient during normal handling such as in manufacturing areas where the
ICs tend to be handled frequently.
The IEC-1000-4-2, formerly IEC801-2, is generally used for testing ESD on equipment and systems.
For system manufacturers, they must guarantee a certain amount of ESD protection since the system itself
is exposed to the outside environment and human presence. The premise with IEC1000-4-2 is that the
system is required to withstand an amount of static electricity when ESD is applied to points and surfaces of
the equipment that are accessible to personnel during normal usage. The transceiver IC receives most of the
ESD current when the ESD source is applied to the connector pins. The test circuit for IEC1000-4-2 is shown
on Figure 2. There are two methods within IEC1000-4-2, the Air Discharge method and the Contact
Discharge method.
With the Air Discharge Method, an ESD voltage is applied to the equipment under test (EUT)
through air. This simulates an electrically charged person ready to connect a cable onto the rear of the
system only to find an unpleasant zap just before the person touches the back panel. The high energy
potential on the person discharges through an arcing path to the rear panel of the system before he or she
even touches the system. This energy, whether discharged directly or through air, is predominantly a
function of the discharge current rather than the discharge voltage. Variables with an air discharge such as
approach speed of the object carrying the ESD potential to the system and humidity will tend to change the
discharge current. For example, the rise time of the discharge current varies with the approach speed.
Fig. 1 ESD Test Circuit for Human Body Model
The Contact Discharge Method applies the ESD current directly to the EUT. This method was devised
to reduce the unpredictability of the ESD arc. The discharge current rise time is constant since the energy is
directly transferred without the air-gap arc. In situations such as hand held systems, the ESD charge can be
directly discharged to the equipment from a person already holding the equipment. The current is transferred
on to the keypad or the serial port of the equipment directly and then travels through the PCB and finally to
the IC.
January 2009, Ver. 04
ILX3232
The circuit models in Figures 1 and 2 represent the typical ESD testing circuits used for these
methods. The CS is initially charged with the DC power supply when the first switch (SW1) is on. Now that
the capacitor is charged, the second switch (SW2) is on while SW1 switches off. The voltage stored in the
capacitor is then applied through RS, the current limiting resistor, onto the device under test (DUT). In ESD
tests, the SW2 switch is pulsed so that the device under test receives a duration of voltage.
Fig. 2. ESD Test Circuit for IEC1000-4-2
Fig. 3. ESD Test Waveform for IEC1000-4-2
For the Human Body Model, the current limiting resistor (RS) and the source capacitor (CS) are 1.5kΩ
an 100pF, respectively. For IEC-1000-4-2, the current limiting resistor (RS) and the source capacitor (CS) are
330Ω an 150pF, respectively. The higher CS value and lower RS value in the IEC1000-4-2 model are more
stringent than the Human Body Model. The larger storage capacitor injects a higher voltage to the test point
when SW2 is switched on. The lower current limiting resistor increases the current charge onto the test point.
Device Pin
Tested
Driver Outputs
Receiver Inputs
IEC1000-4-2
Air Discharge
Level
±15kV
±15kV
4
4
January 2009, Ver. 04
ILX3232
N SUFFIX PLASTIC DIP
(MS - 001BB)
A
Dimension, mm
9
16
B
1
8
Symbol
MIN
MAX
A
18.67
19.69
B
6.1
7.11
5.33
C
F
L
C
-T- SEATING
PLANE
N
G
K
D
M
H
J
0.25 (0.010) M T
NOTES:
1. Dimensions “A”, “B” do not include mold flash or protrusions.
Maximum mold flash or protrusions 0.25 mm (0.010) per side.
D
0.36
0.56
F
1.14
1.78
G
2.54
H
7.62
J
0°
10°
K
2.92
3.81
L
7.62
8.26
M
0.2
0.36
N
0.38
D SUFFIX SOIC
(MS - 012AC)
Dimension, mm
A
16
9
H
B
1
G
P
8
R x 45
C
-TK
D
SEATING
PLANE
J
0.25 (0.010) M T C M
F
M
Symbol
MIN
MAX
A
9.8
10
B
3.8
4
C
1.35
1.75
D
0.33
0.51
F
0.4
1.27
G
1.27
H
5.72
J
0°
8°
K
0.1
0.25
1. Dimensions A and B do not include mold flash or protrusion.
M
0.19
0.25
2. Maximum mold flash or protrusion 0.15 mm (0.006) per side
for A; for B ‑ 0.25 mm (0.010) per side.
P
5.8
6.2
R
0.25
0.5
NOTES:
January 2009, Ver. 04
ILX3232
January 2009, Ver. 04
ILX3232
SOP16L (W) Package
January 2009, Ver. 04