APT31M100B2 APT31M100L 1000V, 31A, 0.40Ω Max N-Channel MOSFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability. T-MaxTM TO-264 APT31M100B2 APT31M100L Single die MOSFET D G S TYPICAL APPLICATIONS FEATURES • Fast switching with low EMI/RFI • PFC and other boost converter • Low RDS(on) • Buck converter • Ultra low Crss for improved noise immunity • Two switch forward (asymmetrical bridge) • Low gate charge • Single switch forward • Avalanche energy rated • Flyback • RoHS compliant • Inverters Absolute Maximum Ratings Symbol ID Parameter Unit Ratings Continuous Drain Current @ TC = 25°C 31 Continuous Drain Current @ TC = 100°C 20 A IDM Pulsed Drain Current VGS Gate-Source Voltage ±30 V EAS Single Pulse Avalanche Energy 2 1875 mJ IAR Avalanche Current, Repetitive or Non-Repetitive 16 A 1 120 Thermal and Mechanical Characteristics Max Unit W PD Total Power Dissipation @ TC = 25°C 1040 RθJC Junction to Case Thermal Resistance 0.12 RθCS Case to Sink Thermal Resistance, Flat, Greased Surface TJ,TSTG Operating and Storage Junction Temperature Range TL Soldering Temperature for 10 Seconds (1.6mm from case) WT Package Weight Torque Mounting Torque ( TO-264 Package), 4-40 or M3 screw Microsemi Website - http://www.microsemi.com 0.11 -55 150 300 °C/W °C 0.22 oz 6.2 g 10 in·lbf 1.1 N·m 8-2006 Typ Rev B Min Characteristic 050-8071 Symbol Static Characteristics TJ = 25°C unless otherwise specified Symbol Parameter Test Conditions Min VBR(DSS) Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 1000 ∆VBR(DSS)/∆TJ Breakdown Voltage Temperature Coefficient RDS(on) Drain-Source On Resistance VGS(th) Gate-Source Threshold Voltage ∆VGS(th)/∆TJ Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Dynamic Characteristics Symbol VDS = 1000V VGS = 0V Forward Transconductance Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance 0.40 5 100 500 ±100 TJ = 125°C Min f = 1MHz Co(er) 5 Effective Output Capacitance, Energy Related Typ Max 34 8500 115 700 VGS = 0V, VDS = 25V Effective Output Capacitance, Charge Related Unit V V/°C Ω V mV/°C µA nA Unit S pF 290 VGS = 0V, VDS = 0V to 667V Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-On Delay Time tf 0.34 4 -10 TJ = 25°C Test Conditions VDS = 50V, ID = 16A 4 td(off) Max TJ = 25°C unless otherwise specified Co(cr) tr 3 VGS = ±30V Parameter gfs Typ 1.15 VGS = VDS, ID = 2.5mA Threshold Voltage Temperature Coefficient IDSS Reference to 25°C, ID = 250µA VGS = 10V, ID = 16A 3 APT31M100B2_L 150 260 46 125 39 35 130 33 VGS = 0 to 10V, ID = 16A, VDS = 500V Resistive Switching VDD = 667V, ID = 16A Current Rise Time RG = 2.2Ω 6 , VGG = 15V Turn-Off Delay Time Current Fall Time nC ns Source-Drain Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Test Conditions MOSFET symbol showing the integral reverse p-n junction diode (body diode) Diode Forward Voltage ISD = 16A, TJ = 25°C, VGS = 0V trr Reverse Recovery Time ISD = 16A 3 Qrr Reverse Recovery Charge Peak Recovery dv/dt Typ Max Unit 100 A G VSD dv/dt Min D 200 S diSD/dt = 100A/µs, TJ = 25°C ISD ≤ 16A, di/dt ≤1000A/µs, VDD = 667V, TJ = 125°C 1 1140 30 V ns µC 10 V/ns 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25°C, L = 14.65mH, RG = 2.2Ω, IAS = 16A. 050-8071 Rev B 8-2006 3 Pulse test: Pulse Width < 380µs, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(cr) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -2.47E-7/VDS^2 + 4.36E-8/VDS + 8.44E-11. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. 100 V GS 90 = 10V J V TJ = -55°C 70 ID, DRIAN CURRENT (A) 60 50 TJ = 25°C 40 30 20 25 20 15 5V 10 5 TJ = 125°C 10 TJ = 150°C 0 30 25 20 15 10 5 0 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) 4.5V 0 NORMALIZED TO 2.0 1.5 1.0 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 80 TJ = -55°C 60 TJ = 25°C 40 TJ = 125°C 20 0.5 0 0 25 50 75 100 125 150 0 -55 -25 TJ, JUNCTION TEMPERATURE (°C) Figure 3, RDS(ON) vs Junction Temperature 0 8 7 6 5 4 3 2 1 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 4, Transfer Characteristics 20,000 45 Ciss 10,000 40 35 TJ = -55°C 30 C, CAPACITANCE (pF) TJ = 25°C 25 TJ = 125°C 20 15 10 1000 Coss 100 Crss 5 VGS, GATE-TO-SOURCE VOLTAGE (V) 16 16 12 8 ID, DRAIN CURRENT (A) Figure 5, Gain vs Drain Current 4 1000 800 600 400 200 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage 12 VDS = 200V 10 VDS = 500V 8 6 VDS = 800V 4 2 50 100 150 200 250 300 350 400 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage 0 0 120 ID = 16A 14 0 10 20 100 80 60 TJ = 25°C 40 TJ = 150°C 20 0 1.5 1.2 0.9 0.6 0.3 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 8, Reverse Drain Current vs Source-to-Drain Voltage 0 8-2006 0 ISD, REVERSE DRAIN CURRENT (A) 0 Rev B gfs, TRANSCONDUCTANCE VDS> ID(ON) x RDS(ON) MAX. 100 ID, DRAIN CURRENT (A) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 120 VGS = 10V @ 16A 2.5 30 25 20 15 10 5 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics Figure 1, Output Characteristics 3.0 = 6, 7, 8 & 9V GS 050-8071 ID, DRAIN CURRENT (A) T = 125°C 30 80 0 APT31M100B2_L 35 200 APT31M100B2_L 200 100 100 IDM DM ID, DRAIN CURRENT (A) 10 13µs 100µs 1ms 1 0.1 Rds(on) 10ms TJ = 150°C TC = 25°C 1 DC line 0.1 13µs 100µs Rds(on) 1ms 10ms Scaling for Different Case & Junction Temperatures: 100ms ID = ID(T = 25 C)*(TJ - TC)/125 ° DC line C 100ms TJ = 125°C TC = 75°C 1 10 1200 100 10 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area 1200 100 10 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area TJ (°C) 1 TC (°C) 0.0140 0.0496 0.0571 Dissipated Power (Watts) 0.0108 0.0266 ZEXT ID, DRAIN CURRENT (A) I 0.375 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. Figure 11, Transient Thermal Impedance Model 0.12 D = 0.9 0.10 0.7 0.08 Note: 0.5 0.06 PDM ZθJC, THERMAL IMPEDANCE (°C/W) 0.14 0.04 0.3 0.02 0.1 t2 t1 = Pulse Duration SINGLE PULSE 0 t1 t Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 0.05 10-1 10-2 10-3 RECTANGULAR PULSE DURATION (seconds) Figure 12. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration 10-4 10-5 TO-264 (L) Package Outline T-MAX™ (B2) Package Outline e3 100% Sn Plated 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 15.49 (.610) 16.26 (.640) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.38 (.212) 6.20 (.244) 5.79 (.228) 6.20 (.244) Drain Drain 20.80 (.819) 21.46 (.845) 8-2006 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800) 25.48 (1.003) 26.49 (1.043) 2.87 (.113) 3.12 (.123) 2.29 (.090) 2.69 (.106) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 19.81 (.780) 21.39 (.842) Gate Drain 050-8071 Rev B Source 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches) 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 2.29 (.090) 2.69 (.106) Gate Drain Source 1.0