S D S S D S ARF1500 ARF1500 BeO RF POWER MOSFET N - CHANNEL ENHANCEMENT MODE 1525-xx S G S S G S 125V 750W 40MHz The ARF1500 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz. • Specified 125 Volt, 27.12 MHz Characteristics: • Output Power = 750 Watts. • Gain = 17dB (Class C) • Efficiency > 75% • • • • High Performance Power RF Package. Very High Breakdown for Improved Ruggedness. Low Thermal Resistance. Nitride Passivated Die for Improved Reliability. • RoHS Compliant All Ratings: TC = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol VDSS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C ID VGS Gate-Source Voltage PD Total Device Dissipation @ TC = 25°C TJ,TSTG TL ARF1500 UNIT 500 Volts 60 Amps ±30 Volts 1500 Watts -55 to 175 Operating and Storage Junction Temperature Range °C 300 Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS VDS(ON) IDSS IGSS gfs Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA) 500 On State Drain Voltage 1 (I D(ON) = 30A, VGS = 10V) TYP MAX 6 7.5 100 Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±400 Forward Transconductance (VDS = 25V, ID = 30A) Visolation RMS Voltage (60Hz Sinewave from terminals to mounting surface for 1 minute) VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 50mA) 6 7.5 UNIT Volts μA nA mhos TBD Volts 3 5 Volts MAX UNIT MIN TYP 0.10 RθJC Junction to Case RθJHS Junction to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) 0.16 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com °C/W 050-5965 Rev E Symbol Characteristic (per package unless otherwise noted) 10-2008 THERMAL CHARACTERISTICS DYNAMIC CHARACTERISTICS Symbol ARF1500 MIN TYP MAX 5150 6030 VDS = 150V f = 1 MHz 500 650 215 225 Test Conditions Characteristic Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn-on Delay Time VGS = 15V 7.5 Rise Time VDD = 250 6.0 ID = 60A @ 25°C 20 RG = 1.6Ω 10 tr td(off) tf VGS = 0V Turn-off Delay Time Fall Time UNIT pF ns FUNCTIONAL CHARACTERISTICS Symbol GPS η Ψ 1 Characteristic Common Source Amplifier Power Gain Test Conditions MIN TYP f = 27.12 MHz 17 19 dB 70 75 % VGS = 0V Drain Efficiency Electrical Ruggedness VSWR 10:1 VDD = 125V Pout = 750W MAX UNIT No Degradation in Output Power Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%. Microsemi reserves the right to change, without notice, the specifications and information contained herein. Per transistor section unless otherwise specified. 20,000 10,000 Ciss CAPACITANCE (pf) 5000 1000 Coss 500 Crss 100 .1 1 10 100 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 1, Typical Capacitance vs. Drain-to-Source Voltage 240 50 VDS> ID(ON) x RDS(ON) MAX. 250μSEC. PULSE TEST @ <0.5 % DUTY CYCLE TJ = -55°C 40 30 20 10 TJ = +25°C TJ = +125°C 0 0 2 4 6 8 10 12 14 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Transfer Characteristics DATA FOR BOTH SIDES IN PARALLEL ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 050-5965 Rev E 10-2008 60 100 OPERATION HERE LIMITED BY R (ON) DS 50 10 100us 1ms 5 TC =+25°C TJ =+200°C SINGLE PULSE 1 1 5 10 50 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Maximum Safe Operating Area 10ms 100ms ARF1500 6 1.10 ID, DRAIN CURRENT (AMPERES) VGS(th), THRESHOLD VOLTAGE (NORMALIZED) 1.15 1.05 1.00 0.95 0.90 0.85 0.80 10.2V 5 8.2V 4 6.2V 3 4.2V 2 2.2V 1 0.75 -50 -25 0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) Figure 4, Typical Threshold Voltage vs Temperature 2V 0 5 10 15 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5, Typical Output Characteristics 0.10 D = 0.9 0.08 0.7 0.06 0.5 0.04 Note: PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 0.12 0.3 t1 t2 0.02 t 0.05 0 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 0.1 10-5 SINGLE PULSE 10-4 10-3 10-2 10 -1 RECTANGULAR PULSE DURATION (SECONDS) Figure 6, Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration 1.0 Table 1 - Typical Class AB Large Signal Impedance -- ARF1500 F (MHz) 2.0 13.5 27 40 Zin (Ω) 6.7-j 12 0.45 -j 2.5 0.22 -j 0.67 0.2 + j .19 ZOL (Ω) 7.5 -j 0.8 7.1 -j 1.7 6.1 -j 3.0 5.0 -j 3.6 Zin - Gate shunted with 25Ω IDQ = 100mA ZOL - Conjugate of optimum load for 750 Watts output at Vdd = 125V Clamp 1.065 .250 S Thermal Considerations and Package Mounting: S .500 Heat Sink The rated 1500W power dissipation is only available when the package mounting surface is at 25°C and the junction temperature is 175°C. The thermal resistance between junctions and case mounting surface is 0.10°C/W. When installed, an additional thermal impedance of 0.06°C/W between the package base and the mounting surface is smooth and flat. Thermal joint compound must be used to reduce the effects of small surface irregularities. The heatsink should incorporate a copper heat spreader to obtain best results. ARF15-BeO 1525-xx 1.065 .045 S G S .207 .375 .207 .500 .105 typ. HAZARDOUS MATERIAL WARNING D G S The ceramic portion of the device between leads and mounting surface is beryllium oxide, BeO. Beryllium oxide dust is toxic when inhaled. Care must be taken during handling and mounting to avoid damage to this area . These devices must never be thrown away with general industrial or domestic waste. 10-2008 .005 050-5965 Rev E The package is designed to be clamped to a heatsink. A clamped joint maintains the required mounting pressure while allowing for thermal expansion of both the device and the heat sink. A simple clamp, and two 6-32 (M3.5) screws can provide the minimum 125 lb. required mounting force. T=4-6 in-lb. Please refer to App Note 1802 "Mounting Instructions for Flangeless Packages." D C7 L5 C9 C10 L4 RF Input + 125V - C8 Output L3 L1 L2 C4 TL1 C11 C5 R1 C1 C2 C3 ARF1500 27.12 MHz Test Circuit C1,C11 ARCO 465 50-450pF mica trimmer C2 1500pF ATC 700B C3 2x 3300 pF ATC 700B C4 8200pF 500V NPO ceramic C5 150pF 500V NPO C7-C8 .1uF 250V ceramic chip C9- C10 1000pF Z5U 500V L1 120 nH 5t #20 .25"d .3"l L2 20 nH #20 hairpin loop .3" x .125" L3 175 nH - 4t #10 .625" dia .875" l L4 2uH - 22t #24 enam. .312" dia. L5 500nH 2t on 850u .5" bead R1 51 Ω .5W TL1 .25" x 1.75" (30 Ω) Stripline 27 MHz Test Amp ARF1500 BeO 135-05 ARF1500 J1 J2 RF 3-02 Parts placement 050-5965 Rev E 10-2008 27 MHz Test Amp ARF1500 RF 3-02 1:1 pcb artwork