ISAHAYA INA5001AC1

〈SMALL-SIGNAL TRANSISTOR〉
TENTATIVE
INA5001AC1
This is not a final specification.
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE (mini type)
Some parameters are subject to change.
DESCRIPTION
OUTLINE DRAWING
Unit:mm
INA5001AC1 is a super mini package resin sealed
silicon PNP epitaxial transistor,
2.5
It is designed for relay draive or Power supply application.
1.5
0.95
●Super mini package for easy mounting
①
0.95
2.9
1.90
FEATURE
②
0.5
0.4
0.5
.
③
● Low VCE(sat) VCE(sat)=-0.5 V max(@IC=-500mA/IB=-50mA)
● High collector current
0.8
0.16
VCEO=-50V
1.1
● High voltage
IC=-1A
0~0.1
APPLICATION
Relay drive, Power supply for audio equipment, VTR , etc
MAXIMUM RATINGS(Ta=25℃)
Symbol
Parameter
Ratings
Unit
VCBO
Collector to Base voltage
-50
V
VEBO
Emitter to Base voltage
-5
V
VCEO
Collector to Emitter voltage
-50
V
IC
Collector current
-1
A
ICM
Peak collector current
-2
A
PC
Collector dissipation
200
mW
Tj
Junction temperature
+150
℃
Tstg
Storage temperature
-55~+150
℃
JEITA:SC-59
TERMINAL CONNECTER
①:BASE
②:EMITTER
③:COLLECTOR
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Parameter
Symbol
Test conditions
Limits
Min
Typ
Max
Unit
C to B break down voltage
V(BR)CBO
I C=-10μA , I E=0
-50
-
-
V
E to B break down voltage
V(BR)EBO
I E=-10μA , I C=0
-5
-
-
V
C to E break down voltage
V(BR)CEO
I C=-1mA ,R
-50
-
-
V
BE
=∞
Collector cut off current
ICBO
V
CB
Emitter cut off current
IEBO
V
EB=-5V, I C=0mA
hFE
V
CE
DC forward current gain
C to E Saturation Voltage
Gain bandwidth product
Collector output capacitance
=-50V, I E=0mA
-
-
-0.1
uA
-
-
-0.1
uA
=-4V, I C=-0.1A
160
-
380
I C=-500mA ,IB=-50mA
-
-
-0.5
V
fT
V
CE
=-2V, I E=500mA
-
120
-
MHz
Cob
V
CB
=-10V, I E=0mA,f=1MHz
-
12
-
pF
VCE(sat)
ISAHAYA ELECTRONICS CORPORATION
〈SMALL-SIGNAL TRANSISTOR〉
TENTATIVE
INA5001AC1
This is not a final specification.
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE (mini type)
Some parameters are subject to change.
COMMON EMITTER OUTPUT
Collector dissipation-AMBIENT TEMPERATURE
-0.6
400
Collector current IC (A)
Collector dissipation Pc (mW)
500
300
200
100
0
-5.0mA
-4.5mA
-4.0mA
-3.5mA
-3.0mA
PcMAX=0.2W
Ta=25℃
-2.5mA
-0.4
-2.0mA
-1.5mA
-1mA
-0.2
IB=-0.5mA
-0
0
40
80
120
160
200
-0
AMBIENT TEMPERATURE Ta (℃)
-1
-2
DC forward current gain VS. Collector current
COMMON EMITTER TRANSFER
-100
1000
VCE=-4V
DC forward current gain hFE
Collector current IC(mA)
VCE=-4V
-10
Ta=85℃
25℃
-40℃
-1
Ta=85℃
25℃
-0
-0.2
-0.4
-0.6
-0.8
-1
-40℃
100
10
-0.1
-0.1
-1.2
COLLECTOR TO EMITTER SATURATION VOLTAGE
VS. BASE CURRENT
-1.6
-0.3A
-0.4A
-0.5A
-0.6A
-0.2A
IC=-0.1A
-1.2
-0.6
-0.4
-0.2
-0
-0.1
-100
-1000
COLLECTOR TO EMITTER SATURATION VOLTAGE
VS. COLLECTOR CURRENT
-1
-10
BASE CURRENT IB (mA)
-100
COLLECTOR TO EMITTER SATURATION
VOLTAGE VCE(sat) (mV)
-1.4
-0.8
-10
-1000
Ta=25℃
-1
-1
Collector current IC(mA)
BASE TO EMITTER VOLTAGE VBE (V)
COLLECTOR TO EMITTER SATURATION
VOLTAGE VCE (V)
-3
COLLECTOR TO EMITTER VOLTAGE VCE (V)
IC/IB=10
-100
Ta=85℃
25℃
-10
-0.1
-40℃
-1
-10
-100
COLLECTOR CURRENT IC(mA)
ISAHAYA ELECTRONICS CORPORATION
-1000
〈SMALL-SIGNAL TRANSISTOR〉
TENTATIVE
INA5001AC1
This is not a final specification.
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE (mini type)
Some parameters are subject to change.
GAIN BAND WIDTH PRODUCT
VS. EMITTER CURRENT
COLLECTOR OUTPUT CAPACITANCE
VS. COLLECTOR TO BASE VOLTAGE
100
Ta=25℃
VCE=-2V
COLLECTOR OUTPUT CAPACITANCE
Cob (pF)
GAIN BAND WIDTH PRODUCT fT (MHz)
1000
100
10
1
0.1
1
10
100
1000
EMITTER CURRENT IE (mA)
Ta=25℃
single pulse
Ta=25℃
IE=0
f=1MHz
10
1
-0.1
-1
ASO
-10
ICmax=-1A
PW=1msec
10msec
-0.1
DC (200mW)
100msec
1sec
-0.01
VCEmax=-50V
Collector current IC (A)
ICMmax=-2A(less than 100msec)
-1
-10
COLLECTOR TO BASE VOLTAGE VCB (V)
-0.001
-0.01
-0.1
-1
-10
-100
COLLECTOR TO EMITTER VOLTAGE VCE (V)
ISAHAYA ELECTRONICS CORPORATION
-100
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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Feb.2009