INC5001AP1 For low frequency power amplify Silicon NPN Epitaxial DESCRIPTION OUTLINE DRAWING UNIT：ｍｍ INC5001AP1 is a silicon NPN epitaxial transistor designed for relay 4.6 MAX 1.6 drive or Power supply application. 1.5 FEATURE C E 0.8 MIN ●High collector current IC=1A ●Low VCE(sat) VCE（sat）=0.25V max（@IC=500mA/ IB=50mA） ●High collector dissipation PC=500mW B 2.5 ●High voltage VCEO=60V 4.2 MAX ●Small package for easy mounting. 0.53 MAX 0.4 0.48 MAX 1.5 3.0 APPLICATION マーキング MARKING Relay drive, power supply for audio equipment, VTR, etc TERMINAL CONNECTOR 電極接続 Ｅ: E：EMITTER エミッタ Ｃ: C：COLLECTOR コレクタ Ｂ: ベース EIAJ : SC-62 JEDEC : B：BASE JEDEC：― MAXIMUM RATING（Ta=25℃） SYMBOL PARAMETER RATING UNIT VCBO Collector to Base voltage 80 V VEBO Emitter to Base voltage 5 V VCEO Collector to Emitter voltage 60 V I C Collector current 1 I CM Peak Collector current Collector dissipation(Ta=25℃) Tj Tstg 500 mW Junction temperature ＋150 ℃ Storage temperature -55～＋150 ℃ ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER Type Name A Y A 2 PC MARKING W LOT № hFE ITEM （Ta=25℃） TEST CONDITIONS LIMITS MIN TYP MAX UNIT V(BR)CBO C to B break down voltage I C=10μA，I E=0mA 80 V V(BR)EBO E to B break down voltage I E=10μA，I C=0mA 5 V V(BR)CEO C to E break down voltage I C=1mA，RBE=∞ 60 ICBO Collector cut off current VCB=80V，I E =0mA 0.1 μA IEBO Emitter cut off current VEB=5V，I C=0mA 0.1 μA ｈＦＥ DC forward current gain VCE=4V，IC=0.1A VCE(sat) C to E saturation voltage IC=500mA，I B=50mA fT Gain band width product VCE=10V，IE=-50mA Cob Collector output capacitance VCB=10V，IE=0mA，f=1MHz ISAHAYA ELECTRONICS CORPORATION 130 V 320 - 0.25 V 150 MHz 10 pF INC5001AP1 For low frequency power amplify Silicon NPN Epitaxial TYPICIAL CHARACTERISTICS Collector dissipation-AMBIENT TEMPERTURE COMMON EMITTER OUTPUT Pcmax=0.5W 0.6 5.0mA 4.5mA 4.0mA 3.5mA 3.0mA 2.5mA 800 Collector current IC (A) Collector dissipation Pc (mW) 1000 600 400 200 0.4 Ta=25℃ 2.0mA 1.5mA 1.0mA 0.2 IB=0.5mA 0 0 0 40 80 120 160 AMBIENT TEMPERTURE Ta (℃) 200 0 0.5 1 1.5 2 2.5 COLLECTOR TO EMITTER VOLTAGE VCE (V) 3 DC forward current gain VS. Collector current COMMON EMITTER TRANSFER 1000 100 VCE=4V Ta=85℃ 25℃ DC forward current gain hFE Collector current IC(mA) VCE=4V -40℃ 10 1 Ta=85℃ 25℃ 10 0.1 0 0.2 0.4 0.6 0.8 1 BASE TO EMITTER VOLTAGE VBE (V) 0.1 1.2 COLLECTOR TO EMITTERSATURATION VOLTAGE VCE(sat) （ｍV) 2 Ta=25 ℃ 1.8 0.5A 0.6A 0.4A 0.3A IC=0.1A 1.2 0.2A 1.6 1.4 1 0.8 0.6 0.4 0.2 0 0.1 1 10 BASE CURRENT IB (mA) 1 10 100 Collector current IC(mA) 1000 COLLECTOR TO EMITTERSATURATION VOLTAGE VS. COLLECTOR CURRENT COLLECTOR TO EMITTERSATURATION VOLTAGE VS. BASE CURRENT COLLECTOR TO EMITTERSATURATION VOLTAGE VCE (V) -40℃ 100 100 1000 IC/IB=10 100 Ta=85℃ 25℃ -40℃ 10 0.1 1 10 100 COLLECTOR CURRENT IC(mA) ISAHAYA ELECTRONICS CORPORATION 1000 INC5001AP1 For low frequency power amplify Silicon NPN Epitaxial COLLECTOR OUTPUT CAPACITANCE VS. COLLECTOR TO BASE VOLTAGE GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT GAIN BAND WIDTH PRODUCT ｆT (MHｚ) Ta=25℃ VCE=10V 100 10 COLLECTOR OUTPUT CAPACITANCE Cob (pF) 100 1000 Ta=25℃ IE=0mA f=1MHz 10 1 1 -0.1 -1 -10 -100 -1000 EMITTER CURRENT IE (ｍA) Ta=25℃ single pulse 0.1 1 10 COLLECTOR TO BASE VOLTAGE VCB (V) ASO 10 PW=1msec ICmax=1A 10msec 0.1 100msec DC(500mW) 0.01 1sec VCEmax=60V Collector current IC (A) ICMmax=2A(100msec以下） 1 0.001 0.1 1 10 100 COLLECTOR TO EMITTER VOLTAGE VCE (V) ISAHAYA ELECTRONICS CORPORATION 100 Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. 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