ISC 2N3055

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
2N3055
DESCRIPTION
·Excellent Safe Operating Area
·DC Current [email protected] = 4A
·Collector-Emitter Saturation Voltage: VCE(sat)= 1.1 V(Max)@ IC = 4A
·Complement to Type MJ2955
APPLICATIONS
·Designed for general-purpose switching and amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCER
Collector-Emitter Voltage
70
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
15
A
IB
Base Current
7
A
PC
Collector Power [email protected]=25℃
115
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200
℃
MAX
UNIT
1.52
℃/W
B
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal Resistance,Junction to Case
isc Website:www.iscsemi.cn
1
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
2N3055
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC=200mA ; IB=0
60
V
VCER(SUS)
Collector-Emitter Sustaining Voltage
IC=200mA ; RBE=100Ω
70
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 4A; IB= 0.4A
1.1
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 10A; IB= 3.3A
3.0
V
VBE(on)
Base-Emitter On Voltage
IC= 4A ; VCE= 4V
1.5
V
ICEO
Collector Cutoff Current
VCE= 30V; IB=0
0.7
mA
ICEX
Collector Cutoff Current
VCE= 100V; VBE(off)= 1.5V
VCE= 100V; VBE(off)= 1.5V,TC=150℃
1.0
5.0
mA
IEBO
Emitter Cutoff Current
VEB= 7.0V; IC=0
5.0
mA
hFE-1
DC Current Gain
IC= 4A ; VCE= 4V
20
hFE-2
DC Current Gain
IC= 10A ; VCE= 4V
5.0
Second Breakdown Collector
Current with Base Forward Biased
VCE= 40V,t= 1.0s,Nonrepetitive
2.87
A
Current Gain-Bandwidth Product
IC= 0.5A ; VCE= 10V;f=1.0MHz
2.5
MHz
Is/b
fT
CONDITIONS
MIN
B
B
isc Website:www.iscsemi.cn
2
MAX
UNIT
70
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Website:www.iscsemi.cn
3
2N3055