ISC 2N3715

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
2N3715/3716
DESCRIPTION
·DC Current Gain: hFE= [email protected]= 1A
·Wide Area of Safe Operation
·Low Collector Saturation Voltage: VCE(sat)= 0.8V(Max.)@ IC= 5A
·Complement to Type 2N3791/3792
APPLICATIONS
·Designed for medium-speed switching and amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
PARAMETER
VALUE
2N3715
80
2N3716
100
2N3715
60
Collector-Base Voltage
V
Collector-Emitter Voltage
V
2N3716
VEBO
UNIT
80
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
10
A
IB
Base Current
4
A
PC
Collector Power [email protected]=25℃
150
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200
℃
MAX
UNIT
1.17
℃/W
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal Resistance,Junction to Case
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
2N3715/3716
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2N3715
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
MIN
TYP.
MAX
UNIT
60
IC= 200mA ; IB= 0
2N3716
V
80
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 5A; IB= 0.5A
0.8
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 5A; IB= 0.5A
1.5
V
VBE(on)
Base-Emitter On Voltage
IC= 3A ; VCE= 2V
1.5
V
2N3715
VCE= 80V; VBE(off)= -1.5V
VCE= 60V; VBE(off)= -1.5V, TC=150℃
1.0
10
2N3716
VCE= 100V; VBE(off)= -1.5V
VCE= 80V; VBE(off)= -1.5V, TC=150℃
1.0
10
5.0
ICEX
Collector Cutoff Current
mA
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE-1
DC Current Gain
IC= 1A ; VCE= 2V
50
hFE-2
DC Current Gain
IC= 3A ; VCE= 2V
30
Current-Gain—Bandwidth Product
IC= 0.5A ; VCE= 10V ;ftest= 1.0MHz
4
fT
mA
150
MHz
Switching Times
tr
tstg
tf
Rise Time
Storage Time
IC= 5A; IB1= -IB2= 0.5A
Fall Time
isc Website:www.iscsemi.cn
2
0.45
μs
0.3
μs
0.4
μs