isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N3772 DESCRIPTION ·Excellent Safe Operating Area ·High DC Current Gain-hFE=15(Min)@IC = 10A ·Low Saturation Voltage: VCE(sat)= 1.4V(Max)@ IC = 10A APPLICATIONS ·Designed for linear amplifiers, series pass regulators, and inductive switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT V VCBO Collector-Base Voltage 100 VCEX Collector-Emitter Voltage 80 VCEO Collector-Emitter Voltage 60 VEBO Emitter-Base Voltage Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous IBM Base Current-Peak PC w V s c s .i ww IC n c . i m e V 7 20 30 V A A 5 A 15 A Collector Power Dissipation @TC=25℃ 150 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ MAX UNIT 1.17 ℃/W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N3772 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 200mA ; IB= 0 60 V VCEX(SUS) Collector-Emitter Sustaining Voltage IC= 200mA ; VBE(off)= 1.5V; RBE=100Ω 80 V VCER(SUS) Collector-Emitter Sustaining Voltage IC= 200mA ; RBE= 100Ω 70 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A 1.4 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 20A; IB= 4A 4.0 V VBE(on) Base-Emitter On Voltage IC= 10A ; VCE= 4V 2.2 V ICEO Collector Cutoff Current VCE= 50V; IB= 0 10 mA ICEV Collector Cutoff Current VCE= 100V; VBE(off)= 1.5V VCE= 45V; VBE(off)= 1.5V,TC=150℃ 5.0 10 mA ICBO Collector Cutoff Current VCB= 100V; IE= 0 5.0 mA IEBO Emitter Cutoff Current VEB= 7V; IC=0 5.0 mA hFE-1 DC Current Gain hFE-2 n c . i m e s c s .i ww w MIN MAX UNIT IC= 10A ; VCE= 4V 15 DC Current Gain IC= 20A ; VCE= 4V 5 fT Current-Gain—Bandwidth Product IC= 1A ; VCE= 4V ;ftest= 50kHz 0.2 MHz Is/b Second Breakdown Collector Current with Base Forward Biased VCE= 60V,t= 1.0s,Nonrepetitive 2.5 A isc Website：www.iscsemi.cn 2 60