ISC 2N3791

Inchange Semiconductor
Product Specification
2N3791 2N3792
Silicon PNP Power Transistors
DESCRIPTION
·With TO-3 package
·Complement to type 2N3715 ,2N3716
·Excellent safe operating area
APPLICATIONS
Designed for medium-speed switching
and amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
2N3791
VCBO
Collector-base voltage
-60
Open base
2N3792
VEBO
V
-80
2N3791
Collector-emitter voltage
Emitter-base voltage
UNIT
-60
Open emitter
2N3792
VCEO
VALUE
V
-80
Open collector
-7
V
IC
Collector current
-10
A
IB
Base current
-4
A
PD
Total Power Dissipation
150
W
Tj
Junction temperature
200
℃
Tstg
Storage temperature
-65~200
℃
VALUE
UNIT
1.17
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
R(th) jc
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
2N3791 2N3792
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2N3791
VCEO(SUS)
Collector-emitter
sustaining voltage
MIN
TYP.
MAX
UNIT
-60
V
-80
V
IC=-0.2A ;IB=0
2N3792
VCE(sat)
Collector-emitter saturation voltage
IC=-5A; IB=-0.5A
-1.0
V
VBE(on)-1
Base-emitter on voltage
IC=-5A ; VCE=-2V
-1.8
V
VBE(on)-2
Base-emitter on voltage
IC=-10A ; VCE=-4V
-4.0
V
2N3791
VCE=-60V; VBE(off)=-1.5V
TC=150℃
-1.0
-5.0
mA
2N3792
VCE=-80V; VBE(off)=-1.5V
TC=150℃
-1.0
-5.0
mA
-5.0
mA
ICEX
Collector
cut-off current
IEBO
Emitter cut-off current
VEB=-7V; IC=0
hFE-1
DC current gain
IC=-1A ; VCE=-2V
50
hFE-2
DC current gain
IC=-3A ; VCE=-2V
30
Transition frequency
IC=-0.5A;VCE=-10V
4
fT
2
180
MHz
Inchange Semiconductor
Product Specification
2N3791 2N3792
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3