ISC 2N4914

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
2N4913
DESCRIPTION
·Low Collector Saturation Voltage: VCE(sat)= 1.5V(Max.)@ IC= 5A
·DC Current Gain: hFE= 25-100 @IC= 2.5A
·Complement to Type 2N4904
APPLICATIONS
·Designed for general purpose use in power amplifier and
switching circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
40
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
5
A
IB
Base Current-Continuous
1
A
PC
Collector Power [email protected]=25℃
87.5
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal Resistance,Junction to Case
isc Website:www.iscsemi.cn
MAX
UNIT
2.0
℃/W
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
2N4913
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 200mA ; IB= 0
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 2.5A; IB= 0.25A
1.0
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 5A; IB= 1A
1.5
V
VBE(on)
Base-Emitter On Voltage
IC= 2.5A; VCE= 2V
1.4
V
ICEO
Collector Cutoff Current
VCE= 40V; IB= 0
1.0
mA
ICBO
Collector Cutoff Current
VCB= 40V; IE= 0
0.1
mA
ICEV
Collector Cutoff Current
VCE= 40V; VBE(off)= -1.5V
VCE= 40V; VBE(off)= -1.5V, TC=150℃
0.1
2.0
mA
IEBO
Emitter Cutoff Current
VEB=-5V; IC= 0
1.0
mA
hFE-1
DC Current Gain
IC= 2.5A; VCE= 2V
25
hFE-2
DC Current Gain
IC= 5A; VCE= 2V
7
Current-Gain—Bandwidth Product
IC= 1A; VCE= 10V; ftest= 1.0MHz
4
fT
isc Website:www.iscsemi.cn
CONDITIONS
2
MIN
MAX
40
UNIT
V
100
MHz