Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5614 2N5616 2N5618 2N5620 DESCRIPTION ・With TO-3 package ・Excellent safe operating area ・Low collector saturation voltage APPLICATIONS ・For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol 导体 半 电 R O T UC Absolute maximum ratings(Ta=℃) 固 SYMBOL VCBO VCEO PARAMETER CONDITIONS D N O IC 2N5614 Collector-base voltage M E S E 2N5616/5618 ANG INCH Collector-emitter voltage Open emitter 100 120 2N5614 60 2N5616/5618 Open base Emitter-base voltage UNIT 80 2N5620 2N5620 VEBO VALUE 80 V V 100 Open collector 5 V 5 A 50 W IC Collector current PD Total power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ VALUE UNIT 1.5 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5614 2N5616 2N5618 2N5620 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N5614 VCEO(SUS) Collector-emitter sustaining voltage 2N5616/5618 TYP. MAX UNIT 60 IC=50mA ;IB=0 2N5620 VCEsat MIN V 80 100 Collector-emitter saturation voltage IC=1A; IB=0.1A 0.5 V VBE Base-emitter on voltage IC=2.5A ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=Rated VCBO; IE=0 0.1 mA ICEO Collector cut-off current VCE= Rated VCEO,IB=0 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE 导体 半 电 固 2N5614/5618 DC current gain M E S GE N A H INC Transition frequency 200 30 90 D N O IC IC=2.5A ; VCE=5V 2N5616/5620 2N5614/5618 fT R O T UC 70 70 IC=0.5A ; VCE=10V 2N5616/5620 2 MHz 60 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5614 2N5616 2N5618 2N5620 PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 outline dimensions 3