isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2N5737 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= -60V(Min.) ·Low Collector Saturation Voltage: VCE(sat)= -0.5V(Max.)@ IC= -5A ·Wide Area of Safe Operation APPLICATIONS ·Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak -20 A IB Base Current-Continuous -4 A PC Collector Power Dissipation @TC=100℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-a Thermal Resistance,Junction to Ambient 0.5 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2N5737 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -200mA ; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A -0.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -2.5A -3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -5A; IB= -0.5A -1.2 V VBE(on) Base-Emitter On Voltage IC= -4A; VCE= -4V -1.5 V ICEO Collector Cutoff Current VCE= -60V; IB= 0 -0.5 mA ICBO Collector Cutoff Current VCB= -60V; IE= 0 -0.1 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -0.1 mA hFE-1 DC Current Gain IC= -5A; VCE= -5V 20 hFE-2 DC Current Gain IC= -10A; VCE= -5V 4 Current-Gain—Bandwidth Product IC= -0.5A; VCE= -10V 10 fT isc Website：www.iscsemi.cn CONDITIONS 2 MIN MAX -60 UNIT V 80 MHz