Inchange Semiconductor Product Specification 2N5883 2N5884 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N5885 2N5886 ・High power dissipations APPLICATIONS ・They are intended for use in power linear and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol 导体 半 电 R O T UC Absolute maximum ratings(Ta=℃) 固 SYMBOL VCBO PARAMETER CONDITIONS 2N5883 Open emitter 2N5884 G N A INCH 2N5883 VCEO Collector-emitter voltage Emitter-base voltage Open collector UNIT -60 V -80 -60 Open base 2N5884 VEBO OND IC M E ES Collector-base voltage VALUE V -80 -5 V IC Collector current -25 A ICM Collector current-peak -50 A IB Base current -7.5 A PD Total Power Dissipation 200 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 0.875 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N5883 2N5884 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-emitter sustaining voltage CONDITIONS 2N5883 MIN TYP. MAX UNIT -60 IC=-0.2A ;IB=0 V 2N5884 -80 VCEsat-1 Collector-emitter saturation voltage IC=-15A; IB=-1.5A -1 V VCEsat-2 Collector-emitter saturation voltage IC=-25A ;IB=-6.25A -4 V Base-emitter saturation voltage IC=-25A ;IB=-6.25A -2.5 V VBE Base-emitter on voltage IC=-10A ; VCE=-4V -1.5 V ICBO Collector cut-off current VCB=ratedVCBO; IB=0 -1 mA ICEO Collector cut-off current -2 mA VBEsat 2N5883 导体 半 电 2N5884 ICEV 固 Emitter cut-off current hFE-1 DC current gain hFE-2 hFE-3 fT Ccb VCE=-40V; IB=0 R O T UC VCE=ratedVCEO; Collector cut-off current (VBE(off)=1.5V) IEBO VCE=-30V; IB=0 D N O IC VCE=ratedVCEO; TC=150℃ G N A INCH M E S E VEB=-5V; IC=0 IC=-3A ; VCE=-V 35 DC current gain IC=-10A ; VCE=-4V 20 DC current gain IC=-25A ; VCE=-4V 4 Trainsistion frequency IC=-1A ; VCE=-10V;f=1MHz 4 Collector base capacitance IE=0; VCB=-10V;f=1MHz -1 mA -10 -1 mA 100 MHz 500 pF 0.7 μs 1.0 μs 0.8 μs Switching times tr Rise time ts Storage time tf Fall time IC=-10A ;IB1=- IB2=-1A VCC=-30V 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5883 2N5884 PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3