Inchange Semiconductor Product Specification 2N6029 2N6030 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N5629 2N5630 ・High power dissipations APPLICATIONS ・For high voltage and high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) 体 半导 SYMBOL 固电 VCBO PARAMETER 2N6029 Collector-base voltage IC M E ES 2N6030 G N A CH Collector-emitter voltage Open base 2N6030 VEBO IN OND Open emitter 2N6029 VCEO R O T UC CONDITIONS Open collector UNIT -100 V -120 -100 V -120 -7 V Collector current -16 A ICM Collector current-peak -20 A IB Base current -5.0 A PD Total Power Dissipation 200 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 0.875 ℃/W IC Emitter-base voltage VALUE TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N6029 2N6030 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-emitter sustaining voltage CONDITIONS 2N6029 MIN TYP. MAX UNIT -100 IC=-0.2A ;IB=0 V 2N6030 -120 VCEsat-1 Collector-emitter saturation voltage IC=-10A; IB=-1A -1.0 V VCEsat-2 Collector-emitter saturation voltage IC=-16A ;IB=-4A -2.0 V Base-emitter saturation voltage IC=-10A; IB=-1A -1.8 V VBE Base-emitter on voltage IC=-8A ; VCE=-2V -1.5 V ICBO Collector cut-off current VCB=ratedVCBO; IE=0 -1.0 mA VBEsat ICEO ICEV 体 半导 2N6029 VCE=-50V; IB=0 2N6030 VCE=-60V; IB=0 R O T UC Collector cut-off current 固电 Collector cut-off current (VBE(off)=1.5V) -1.0 VCE=ratedVCB M E S E G N A CH IN IEBO Emitter cut-off current hFE-1 DC current gain D N O IC -1.0 mA VCE=ratedVCB; TC=150℃ -5.0 VEB=-7V; IC=0 -1.0 2N6029 mA 25 100 20 80 mA IC=-8A ; VCE=-2V 2N6030 hFE-2 DC current gain IC=-16A ; VCE=-2V COB Output capacitance IE=0 ; VCB=-10V ;f=0.1MHz fT Transition frequency IC=-1A ; VCE=-20V 2 4 1000 1.0 pF MHz Inchange Semiconductor Product Specification 2N6029 2N6030 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3