ISC 2N6039

Inchange Semiconductor
Product Specification
2N6037 2N6038 2N6039
Silicon NPN Power Transistors
DESCRIPTION
・With TO-126 package
・Complement to type 2N6034/6035/6036
・DARLINGTON
・High DC current gain
APPLICATIONS
・Designed for general-purpose amplifier
and low-speed switching applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Emitter
2
Collector
3
Base
体
导
电半
Absolute maximum ratings(Ta=℃)
固
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
D
N
O
C
I
M
E
2N6037
Collector-base voltage
IN
2N6038
Open emitter
NG S
CHA
Collector-emitter voltage
R
O
T
UC
CONDITIONS
2N6039
2N6037
2N6038
Open base
2N6039
Emitter-base voltage
VALUE
UNIT
40
60
V
80
40
60
V
80
Open collector
5
V
IC
Collector current
4
A
ICM
Collector current-peak
8
A
IB
Base current
0.1
A
PD
Total Power Dissipation
40
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
VALUE
UNIT
3.12
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
2N6037 2N6038 2N6039
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2N6037
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6038
MIN
TYP.
MAX
UNIT
40
IC=0.1A ;IB=0
2N6039
V
60
80
VCEsat-1
Collector-emitter saturation voltage
IC=2A; IB=8mA
2.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=4A; IB=40mA
3.0
V
Base-emitter saturation voltage
IC=4A; IB=40mA
4.0
V
VBE
Base-emitter on voltage
IC=2A ; VCE=3V
2.8
V
ICEO
Collector cut-off current
VCE=Rated VCEO; IB=0
0.1
mA
VBEsat
ICEX
ICBO
体
导
电半
固
Collector cut-off current
VCE=Rated VCEO; VBE(off)=1.5V
TC=125℃
Collector cut-off current
VCB=Rated VCBO; IE=0
IEBO
Emitter cut-off current
hFE-1
DC current gain
hFE-2
D
N
O
IC
M
E
S
NG
A
H
C
IN
R
O
T
UC
VEB=5V; IC=0
IC=0.5A ; VCE=3V
500
DC current gain
IC=2A ; VCE=3V
750
hFE-3
DC current gain
IC=4A ; VCE=3V
100
COB
Output capacitance
IE=0;VCB=10V;f=0.1MHz
2
0.1
0.5
mA
0.1
mA
2.0
mA
15000
100
pF
Inchange Semiconductor
Product Specification
2N6037 2N6038 2N6039
Silicon NPN Power Transistors
PACKAGE OUTLINE
体
导
电半
固
N
O
C
EMI
INC
S
G
N
HA
Fig.2 outline dimensions
3
R
O
T
DUC