ISC 2N6049

Inchange Semiconductor
Product Specification
2N6049
Silicon PNP Power Transistors
DESCRIPTION
·With TO-66 package
·Complement to type 2N3054A
APPLICATIONS
·Designed for general purpose switching
and amplifier applications
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-90
V
VCEO
Collector-emitter voltage
Open base
-55
V
VEBO
Emitter-base voltage
Open collector
-7
V
IC
Collector current
-4
A
ICM
Collector current-peak
-10
A
IB
Base current
-2
A
PD
Power dissipation
75
W
Tj
Junction temperature
200
℃
Tstg
Storage temperature
-65~200
℃
MAX
UNIT
2.33
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
2N6049
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter sustaining voltage
IC=-0.1A ; IB=0
VCEsat-1
Collector-emitter saturation voltage
IC=-0.5A ;IB=-50mA
-0.5
V
VCEsat-2
Collector-emitter saturation voltage
IC=-4A; IB=-0.8A
-2.0
V
VBE
Base -emitter on voltage
IC=-0.5A ; VCE=-4V
-1.0
V
ICEX
Collector cut-off current
VCE=-90V;VBE(off)=-1.5V
TC=150℃
-1.0
-6.0
mA
ICEO
Collector cut-off current
VCE=-30V; IB=0
-0.5
mA
IEBO
Emitter cut-off current
VEB=-7V; IC=0
-1.0
mA
hFE-1
DC current gain
IC=-0.5A ; VCE=-4V
25
hFE-2
DC current gain
IC=-3A ; VCE=-4V
6
COB
Output capacitance
IE=0 ; VCB=-10V,f=0.1MHz
fT
Transition frequency
IC=-0.2A ; VCE=-10V;f=1MHz
2
MIN
TYP.
MAX
-55
V
100
200
3.0
UNIT
pF
Inchange Semiconductor
Product Specification
2N6049
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3