isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gainhFE = 750 (Min) @ IC = 6A ·Collector-Emitter Sustaining VoltageVCEO(SUS)= 100V(Min) ·Complement to type 2N6052 APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE UNIT 100 V n c . i m e w w w s c s .i 100 V 5 V 12 A 20 A IC Collector Current -Continuous ICM Collector Current-Peak IB Base Current 0.2 A PC Collector Power Dissipation@TC=25℃ 150 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c ThermalResistance, Junction to Case 1.17 ℃/W isc Website：www.iscsemi.cn 2N6059 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor 2N6059 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A; IB= 24mA 2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 12A; IB= 120mA 3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 12A; IB= 120mA 4.0 V VBE(on) Base-Emitter On voltage IC= 6A ; VCE= 3V 2.8 V ICEO Collector Cutoff current VCE= -50V; IB= 0 1.0 mA ICEX Collector Cutoff current VCE= 100V;VBE(off)= -1.5V VCE= 100V;VBE(off)= -1.5V,TC=150℃ 0.5 5.0 mA IEBO Emitter Cut-off current VEB= 5V; IC= 0 2.0 mA hFE-1 DC Current Gain hFE-2 DC Current Gain COB Output Capacitance n c . i m e s c s i . w w w isc Website：www.iscsemi.cn 100 UNIT IC= 6A ; VCE= 3V 750 IC= 12A ; VCE= 3V 100 IE=0 ; VCB= 10V;ftest= 0.1MHz 2 V 18000 300 pF