ISC 2N6122

Inchange Semiconductor
Product Specification
2N6121 2N6122 2N6123
Silicon NPN Power Transistors
DESCRIPTION
・With TO-220 package
・Complement to PNP type :
2N6124 ;2N6125 ;2N6126
APPLICATIONS
・For use in power amplifier and
switching circuit applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
体
导
电半
R
O
T
UC
Absolute maximum ratings(Ta=25℃)
固
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
CONDITIONS
D
N
O
C
I
M
E
2N6121
Collector-base voltage
IN
Open emitter
NG S
2N6123
80
Collector-emitter voltage
Emitter-base voltage
2N6123
2N6121
2N6122
Open base
Open collector
UNIT
45
60
CHA
2N6122
VALUE
V
80
45
60
V
5
V
IC
Collector current
4
A
ICM
Collector current-peak
8
A
IB
Base current
1
A
PT
Total power dissipation
40
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
MAX
UNIT
3.125
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance from junction to case
Inchange Semiconductor
Product Specification
2N6121 2N6122 2N6123
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2N6121
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6122
MIN
TYP.
MAX
UNIT
45
IC=0.1A ;IB=0
V
60
80
2N6123
VCEsat-1
Collector-emitter saturation voltage
IC=1.5A;IB=0.15A
0.6
V
VCEsat-2
Collector-emitter saturation voltage
IC=4.0A;IB=1.0A
1.4
V
Base-emitter on voltage
IC=1.5A ; VCE=2V
1.2
V
VCE=45V;VBE=1.5V
TC=125℃
VCE=60V;VBE=1.5V
TC=125℃
VCE=80V;VBE=1.5V
TC=125℃
0.1
2.0
0.1
2.0
0.1
2.0
mA
VBE
2N6121
ICEX
Collector cut-off current
2N6122
2N6123
ICEO
IEBO
体
导
电半
Collector cut-off current
固
2N6121
VCE=45V;IB=0
2N6122
VCE=60V;IB=0
2N6123
VCE=80V;IB=0
Emitter cut-off current
S
G
N
HA
2N6121
hFE-1
N
O
C
EMI
VEB=5V; IC=0
INC
DC current gain
2N6122
R
O
T
DUC
1.0
mA
1.0
mA
25
100
20
80
IC=1.5A ; VCE=2V
2N6123
2N6121
10
hFE-2
DC current gain
2N6122
IC=4A ; VCE=2V
2N6123
fT
Transition frequency
7
IC=1A ; VCE=4V
2
2.5
MHz
Inchange Semiconductor
Product Specification
2N6121 2N6122 2N6123
Silicon NPN Power Transistors
PACKAGE OUTLINE
体
导
电半
固
N
O
C
EMI
INC
S
G
N
HA
R
O
T
DUC
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3