Inchange Semiconductor Product Specification 2N6132 2N6133 2N6134 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・High power dissipation ・Complement to NPN type : 2N6129 2N6130 2N6131 APPLICATIONS ・Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol 体 导 电半 R O T UC Absolute maximum ratings(Ta=25℃) 固 SYMBOL VCBO VCEO VEBO PARAMETER CONDITIONS D N O C I M E Collector-base voltage 2N6132 2N6133 Open emitter NG S A H C IN Collector-emitter voltage Emitter-base voltage 2N6134 2N6132 2N6133 Open base 2N6134 VALUE UNIT -40 -60 V -80 -40 -60 V -80 Open collector -5 V IC Collector current -7 A IB Base current -3 A PT Total power dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT 2.5 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification 2N6132 2N6133 2N6134 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6132 VCEO(SUS) Collector-emitter sustaining voltage 2N6133 MIN TYP. MAX UNIT -40 IC=-0.1A ;IB=0 V -60 2N6134 -80 2N6132 -1.4 VCEsat Collector-emitter saturation voltage 2N6133 IC=-7A;IB=-1.2A V 2N6134 VBE ICEV Base-emitter on voltage 固 IEBO Emitter cut-off current hFE DC current gain fT IC=-2.5A ; VCE=-4V -1.4 2N6132 VCE=-40V;VBE=1.5V TC=150℃ -0.5 -3.0 2N6133 VCE=-60V;VBE=1.5V TC=150℃ 2N6134 VCE=-80V; VBE=1.5V TC=150℃ 体 导 电半 Collector cut-off current N O C I M E S NG A H C IN Transition frequency -1.8 VEB=-5V; IC=0 R O T DUC mA -0.5 -3.0 IC=-2.5A ; VCE=-4V 20 IC=-0.2A ; VCE=-4V 2.5 2 V -0.5 -3.0 mA -1.0 mA 100 MHz Inchange Semiconductor Product Specification 2N6132 2N6133 2N6134 Silicon PNP Power Transistors PACKAGE OUTLINE 体 导 电半 固 N O C EMI INC S G N HA R O T DUC Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3