isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6274 DESCRIPTION ·High Switching Speed ·High DC Current Gain: hFE= 30-120@ IC= 20A ·Low Collector Saturation Voltage: VCE(sat)=1.0V(Min.)@ IC= 20A ·Complement to Type 2N6377 APPLICATIONS ·Designed for use in industrial-military power amplifier and switching circuit applications. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL s c s .i PARAMETER VCBO Collector- Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w w VALUE UNIT 120 V 100 V 6 V IC Collector Current-Continuous 50 A ICM Collector Current-Peak 100 A IB Base Current-Continuous 20 A PC Collector Power Dissipation @TC=25℃ 250 W TJ Junction Temperature 200 ℃ -65~200 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn MAX UNIT 0.7 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6274 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 20A; IB= 2A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 50A; IB= 10A 3.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 20A; IB= 2A 1.8 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 50A; IB= 10A 3.5 V VBE(on) Base-Emitter On Voltage IC= 20A; VCE= 4V 1.8 V ICEO Collector Cutoff Current VCE= 50V; IB= 0 50 μA ICEX Collector Cutoff Current VCE= 120V; VBE(off)=1.5V VCE= 120V; VBE(off)=1.5V; TC=150℃ 10 1.0 μA mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 0.1 mA hFE-1 DC Current Gain hFE-2 DC Current Gain hFE-3 fT COB CONDITIONS m e s isc B w. w w MIN MAX 100 n c . i UNIT V IC= 1A; VCE= 4V 50 IC= 20A; VCE= 4V 30 DC Current Gain IC= 50A; VCE= 4V 10 Current-Gain—Bandwidth Product IC= 1A; VCE= 10V 30 Output Capacitance IE= 0; VCB= 10V; ftest= 0.1MHz 600 pF VCC= 80V, IC= 20A, IB1= 2A, VBE(off)= 5V 0.35 μs 0.80 μs 0.25 μs 120 MHz Switching times tr Rise Time ts Storage Time VCC= 80V, IC= 20A, IB1= -IB2= 2A tf Fall Time isc Website：www.iscsemi.cn 2