Inchange Semiconductor Product Specification 2N6285 2N6286 2N6287 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N6282/6283/6284 ・High DC current gain ・DARLINGTON APPLICATIONS ・For use in general-purpose amplifier and low-frequency switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol 导体 半 电 TOR Absolute maximum ratings(Ta=℃) 固 SYMBOL VCBO VCEO VEBO PARAMETER 2N6285 Collector-base voltage IN Collector-emitter voltage 2N6286 EMIC Open emitter GE S N A H C C U D ON CONDITIONS 2N6287 2N6285 2N6286 Open base 2N6287 Emitter-base voltage VALUE UNIT -60 -80 V -100 -60 -80 V -100 Open collector -5 V IC Collector current -20 A ICM Collector current-peak -40 A IB Base current -0.5 A PD Total Power Dissipation 160 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 1.09 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N6285 2N6286 2N6287 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6285 VCEO(SUS) Collector-emitter sustaining voltage 2N6286 MIN TYP. MAX UNIT -60 IC=-0.2A ;IB=0 V -80 2N6287 -100 VCEsat-1 Collector-emitter saturation voltage IC=-10A; IB=-40mA -2.0 V VCEsat-2 Collector-emitter saturation voltage IC=-20A ;IB=-200mA -3.0 V Base-emitter saturation voltage IC=-20A ;IB=-200mA -4.0 V Base-emitter on voltage IC=-10A ; VCE=-3V -2.8 V VBEsat VBE ICEO 体 半导 固电 Collector cut-off current 2N6285 VCE=-30V; IB=0 2N6286 VCE=-40V; IB=0 N A H INC Collector cut-off current D N O IC M E S GE 2N6287 ICEX R O T UC VCE=-50V; IB=0 -1.0 2N6285 VCE=-60V; VBE=-1.5V TC=150℃ -0.5 -5.0 2N6286 VCE=-80V; VBE=-1.5V TC=150℃ -0.5 -5.0 2N6287 VCE=-100V; VBE=-1.5V TC=150℃ -0.5 -5.0 -2.0 IEBO Emitter cut-off current VEB=-5V; IC=0 hFE-1 DC current gain IC=-10A ; VCE=-3V 750 hFE-2 DC current gain IC=-20A ; VCE=-3V 100 COB Output capacitance IE=0; VCB=-10V;f=1MHz 2 mA mA mA 18000 600 pF Inchange Semiconductor Product Specification 2N6285 2N6286 2N6287 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3