Inchange Semiconductor Product Specification 2N6356 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High DC current gain ・DARLINGTON APPLICATIONS ・For general-purpose amplifier and low-frequency switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol 导体 半 电 R O T UC Absolute maximum ratings(Ta=℃) 固 SYMBOL PARAMETER VALUE UNIT 50 V 40 V 5 V Collector current 20 A Base current 0.5 A 150 W VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO IC IB CONDITIONS M E S E ANG INCH Emitter-base voltage D N O IC Open emitter Open base Open collector PD Total Power Dissipation TC=25℃ Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 1.09 ℃/W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N6356 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdwon voltage IC=0.2A ;IB=0 VCEsat-1 Collector-emitter saturation voltage IC=10A ;IB=40mA 2.0 V VCEsat-2 Collector-emitter saturation voltage IC=20A ;IB=1A 4.0 V VBE sat Base-emitter saturation voltage IC=20A ;IB=1A 4.0 V VBE Base-emitter on voltage IC=10A ; VCE=4V 2.8 V ICEO Collector cut-off current 1.0 mA ICBO Collector cut-off current VCB=50V; IE=0 Emitter cut-off current VEB=5V; IC=0 IEBO CONDITIONS 固电 DC current gain hFE-2 DC current gain IC=4A ; VCE=5V IC=20A ; VCE=5V 2 MAX 40 R O T UC 1500 100 UNIT V OND IC M E ES G N A CH IN TYP. VCE=40V;IB=0 体 半导 hFE-1 MIN 0.5 mA 5.0 mA 20000 Inchange Semiconductor Product Specification 2N6356 Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3