Inchange Semiconductor Product Specification 2N6372 2N6373 2N6374 Silicon NPN Power Transistors DESCRIPTION ・With TO-66 package ・Low collector saturation voltage ・Excellent safe operating area APPLICATIONS ・Designed for switching and wide-band amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol 导体 半 电 R O T UC Absolute maximum ratings(Ta=℃) 固 SYMBOL VCBO VCEO VEBO PARAMETER CONDITIONS 2N6372 Collector-base voltage 2N6373 EMIC Open emitter S E G N A H C IN Collector-emitter voltage 2N6374 2N6372 2N6373 Open base 2N6374 Emitter-base voltage OND VALUE UNIT 90 70 V 50 80 60 V 40 Open collector 6 V 6 A 40 W IC Collector current PD Total Power Dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 4.37 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N6372 2N6373 2N6374 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6372 VCEO(SUS) Collector-emitter sustaining voltage 2N6373 MIN TYP. MAX UNIT 80 IC=0.1A ;IB=0 V 60 40 2N6374 VCEsat-1 Collector-emitter saturation voltage IC=2A; IB=0.2A 0.7 V VCEsat-2 Collector-emitter saturation voltage IC=6A; IB=0.6A 1.2 V VBEsat-1 Base-emitter saturation voltage IC=2A; IB=0.2A 1.2 V VBEsat-2 Base-emitter saturation voltage IC=6A; IB=0.6A 2.0 V ICEO 导体 半 电 固 Collector cut-off current 2N6372 VCE=80V; IB=0 2N6373 VCE=60V; IB=0 N A H INC ICBO Collector cut-off current IEBO Emitter cut-off current hFE fT DC current gain Transition frequency D N O IC 0.1 mA VCB=Rated VCB; IE=0 10 μA VEB=6V; IC=0 0.1 mA M E S GE 2N6374 R O T UC VCE=40V; IB=0 2N6372 IC=2A ; VCE=2V 2N6373 IC=2.5A ; VCE=2V 2N6374 IC=3A ; VCE=2V IC=0.5A;VCE=10V;f=1MHz 2 20 100 4 MHz Inchange Semiconductor Product Specification 2N6372 2N6373 2N6374 Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 outline dimensions 3