isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6420 DESCRIPTION ·Contunuous Collector Current-IC= -1A ·Power Dissipation-PC= 35W @TC= 25℃ ·Collector-Emitter Saturation Voltage: VCE(sat)= -5.0 V(Max)@ IC = -1A APPLICATIONS ·Designed for high-speed switching and linear amplifier application for high-voltage operational amplifiers, switching regulators, converters,deflection stages and high fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w Collector Current-Continuous ICM Collector Current-Peak IB Base Current PC UNIT -250 V n c . i m e s c s .i ww IC VALUE -175 -6 -1.0 V V A -5.0 A -1.0 A Collector Power Dissipation@TC=25℃ 35 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ MAX UNIT 5.0 ℃/W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6420 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.125A -5.0 V VBE(on) Base-Emitter On Voltage IC= -1A ; VCE= -10V -1.4 V ICEO Collector Cutoff Current VCE= -150V; IB= 0 -10 mA ICEX Collector Cutoff Current VCE= -225V; VBE(off)= -1.5V VCE= -225V; VBE(off)= -1.5V,TC=150℃ -1.0 -3.0 mA IEBO Emitter Cutoff Current VEB= -6V; IC= 0 -5.0 mA hFE-1 DC Current Gain hFE-2 DC Current Gain hFE-3 DC Current Gain w isc Website：www.iscsemi.cn IC= -0.1A ; VCE= -10V 40 IC= -0.5A ; VCE= -10V 40 IC= -1A ; VCE= -10V 10 2 MAX -175 n c . i m e s c s .i ww MIN UNIT V 200