Inchange Semiconductor Product Specification 2N6436 2N6437 2N6438 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・High DC current gain ・Fast switching times ・Low collector saturation voltage ・Complement to type 2N6338~2N6341 APPLICATIONS ・For use in industrial-military power amplifier and switching circuit applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol 导体 半 电 R O T UC Absolute maximum ratings(Ta=℃) 固 SYMBOL VCBO VCEO VEBO D N O IC PARAMETER CONDITIONS 2N6436 Collector-base voltage M E S E 2N6437 ANG INCH Collector-emitter voltage Open emitter 2N6438 2N6436 2N6437 Open base 2N6438 Emitter-base voltage VALUE UNIT -100 -120 V -140 -80 -100 V -120 Open collector -6 V IC Collector current -25 A ICM Collector current-peak -50 A IBC Base current -10 A PD Total power dissipation 200 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 0.875 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N6436 2N6437 2N6438 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6436 V(SUS)CEO Collector-emitter sustaining voltage 2N6437 MIN TYP. MAX UNIT -80 IC=-50mA ;IB=0 V -100 2N6438 -120 VCEsat-1 Collector-emitter saturation voltage IC=-10A; IB=-1.0A -1.0 V VCEsat-2 Collector-emitter saturation voltage IC=-25A; IB=-2.5A -1.8 V VBE sat-1 Base-emitter saturation voltage IC=-10A; IB=-1.0A -1.8 V VBE sat-2 Base-emitter saturation voltage IC=-25A; IB=-2.5A -2.5 V ICEX Collector cut-off current VCE=Rated VCEO; VEB=-1.5V TC=150℃ -10 -1.0 μA mA ICBO Collector cut-off current VCB=Rated VCB; IE=0 ICEO 导体 半 电 固 Collector cut-off current 2N6436 VCE= -40V,IB=0 2N6437 VCE=- 50V,IB=0 2N6438 VCE= -60V,IB=0 C U D ON IC M E ES G N A CH IN TOR IEBO Emitter cut-off current VEB=-6V; IC=0 hFE-1 DC current gain IC=-0.5A ; VCE=-2V 30 hFE-2 DC current gain IC=-10A ; VCE=-2V 20 hFE-3 DC current gain IC=-25A ; VCE=-2V 12 COB Output capacitance IE=0 ; VCB=-10V;f=1MHz fT Transition frequency IC=-1A ; VCE=-10V;f=10MHz 2 -10 μA -50 μA -100 μA 120 700 40 pF MHz Inchange Semiconductor Product Specification 2N6436 2N6437 2N6438 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 outline dimensions 3