Inchange Semiconductor Product Specification 2N6467 2N6468 Silicon PNP Power Transistors DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Complement to type 2N6465 2N6466 APPLICATIONS ・For use in audio amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol 导体 半 电 Absolute maximum ratings(Ta=℃) SYMBOL 固 VCBO PARAMETER CONDITIONS 2N6467 Open emitter 2N6468 VCEO VEBO ANG INCH Collector-emitter voltage C U D ON IC M E ES Collector-base voltage 2N6467 UNIT -110 V -130 -100 Open base 2N6468 Emitter-base voltage TOR VALUE V -120 Open collector -5 V -4 A 40 W IC Collector current PD Total power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ VALUE UNIT 2.5 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N6467 2N6468 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6467 VCEO(SUS) Collector-emitter sustaining voltage VBE V -120 IC=-1.5A; IB=-0.15A -1.2 V Base-emitter on voltage IC=-1.5A ; VCE=-4V -1.5 V -10 μA VCB=-110V; IE=0 Collector cut-off current 体 半导 2N6467 VCB=-130V; IE=0 VCE= -100V,IB=0 R O T UC Collector cut-off current 固电 IEBO Emitter cut-off current hFE DC current gain fT UNIT Collector-emitter saturation voltage 2N6468 ICEO MAX IC=-50mA ;IB=0 2N6467 ICBO TYP. -100 2N6468 VCEsat MIN 2N6468 D N O IC M E S GE N A H INC Transition frequency VCE= -120V,IB=0 VEB=-5V; IC=0 IC=-1.5A ; VCE=-4V 15 IC=-0.5A ; VCE=-10V 5 2 -100 μA -10 μA 150 MHz Inchange Semiconductor Product Specification 2N6467 2N6468 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 outline dimensions 3