Inchange Semiconductor Product Specification 2N6475 2N6476 Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·General-purpose medium power for switching and amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS 2N6475 VCBO Collector-base voltage -100 Open base 2N6476 VEBO Emitter-base voltage V -130 2N6475 Collector-emitter voltage UNIT -110 Open emitter 2N6476 VCEO VALUE V -120 Open collector -5 V IC Collector current -4 A IB Base current -2 A PT Total power dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT 3.125 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification 2N6475 2N6476 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6475 VCEO(SUS) Collector-emitter sustaining voltage MIN TYP. MAX UNIT -100 IC=-0.1A ;IB=0 V -120 2N6476 VCEsat-1 Collector-emitter saturation voltage IC=-1.5A;IB=-0.15A -1.2 V VCEsat-2 Collector-emitter saturation voltage IC=-4A;IB=-2A -2.5 V VBE-1 Base-emitter on voltage IC=-1.5A ; VCE=-4V -2.0 V VBE-2 Base-emitter on voltage IC=-4A ; VCE=-2.5V -3.5 V 2N6475 VCE=-100V;VBE=-1.5V TC=100℃ -0.1 -2.0 2N6476 VCE=-120V;VBE=-1.5V TC=100℃ -0.1 -2.0 2N6475 VCE=-50V;IB=0 2N6476 VCE=-60V;IB=0 ICEX ICEO Collector cut-off current mA Collector cut-off current IEBO Emitter cut-off current VEB=-5V; IC=0 hFE-1 DC current gain IC=-1.5A ; VCE=-4V 15 hFE-2 DC current gain IC=-4A ; VCE=-2.5V 2 COB Output capacitance IE=0 ; VCB=-10V;f=1MHz fT Transition frequency 2N6475 -1.0 mA -1.0 mA 150 250 pF 4 IC=-0.5A ; VCE=-4V 2N6476 MHz 5 2 Inchange Semiconductor Product Specification 2N6475 2N6476 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3