Inchange Semiconductor Product Specification 2N6495 Silicon NPN Power Transistors DESCRIPTION ・With TO-66 package ・Low collector saturation voltage ・Excellent safe operating area APPLICATIONS ・Designed for switching and wideband amplifier applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol 导体 半 电 R O T UC Absolute maximum ratings(Ta=25℃) 固 SYMBOL VCBO VCEO VEBO IC PARAMETER M E S GE Collector-base voltage Open emitter N A H INC Collector-emitter voltage Emitter-base voltage D N O IC CONDITIONS Open base Open collector Collector current TC=25℃ VALUE UNIT 150 V 80 V 7 V 10 A 70 W PT Total power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ MAX UNIT 4.37 ℃/W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N6495 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.1 A ; IB=0 VCEsat Collector-emitter saturation voltage IC=10A; IB=1A 1.5 V VBEsat Base-emitter saturation voltage IC=10A; IB=1A 2.0 V VBE Base -emitter on voltage IC=10A ; VCE=3V 2.8 V ICEV Collector cut-off current VCE=150V;VBE(off)=-1.5V TC=150℃ 0.1 1.0 mA ICEO Collector cut-off current VCE=40V; IB=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA hFE fT CONDITIONS 导体 半 电 固 DC current gain IC=10A ; VCE=3V 2 MAX UNIT V R O T UC 10 D N O IC IC=1 A ; VCE=10V N A H INC TYP. 80 M E S GE Transition frequency MIN 60 25 MHz Inchange Semiconductor Product Specification 2N6495 Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions 3