Inchange Semiconductor Product Specification 2SA1011 Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SC2344 APPLICATIONS ·High voltage switching , ·Audio frequency power amplifier; ·100W output predriver applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -180 V VCEO Collector-emitter voltage Open base -160 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -1.5 A ICM Collector current-Peak -3.0 A PC Collector power dissipation 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SA1011 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ,RBE=∞ -160 V V(BR)CBO Collector-base breakdown voltage IC=-1mA; IE=0 -180 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA; IC=0 -6 V Collector-emitter saturation voltage IC=-0.5A; IB=-50mA -0.5 V VBE Base-emitter voltage IC=-10mA ; VCE=-5V -1.5 V ICBO Collector cut-off current VCB=-120V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-4V; IC=0 -10 μA hFE DC current gain IC=-0.3A ; VCE=-5V fT Transition frequency IC=-50mA ; VCE=-10V 100 MHz Cob Output capacitance IE=0; f=1MHz ; VCB=-10V 30 pF 0.29 μs 0.48 μs 0.19 μs VCEsat CONDITIONS MIN TYP. 60 MAX UNIT 200 Switching times resistive load ton Turn-on time ts Storage time tf Fall time IC=-0.5A ;IB1=-IB2=-50mA VCC=20V; RL=40Ω hFE Classifications D E 60-120 100-200 2 Inchange Semiconductor Product Specification 2SA1011 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SA1011 Silicon PNP Power Transistors 4