Inchange Semiconductor Product Specification 2SA1021 Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·High breakdown voltage ·Large current capacity APPLICATIONS ·For color TV sound output;converters Inverters applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -150 V VCEO Collector-emitter voltage Open base -150 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -1.5 A ICM Collector current-Peak -2.5 A PC Collector power dissipation Ta=25℃ 1.0 TC=25℃ 20 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SA1021 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-1mA; RBE=∞ -150 V V(BR)CBO Collector-base breakdown voltage IC=-10μA; IE=0 -150 V V(BR)EBO Emitter-base breakdown voltage IE=-10μA ; IC=0 -6 V VCEsat Collector-emitter saturation voltage IC=-500mA; IB=-50mA -0.5 V VBEsat Base-emitter saturation voltage IC=-500mA; IB=-50mA -1.2 V ICBO Collector cut-off current VCB=-120V; IE=0 -1.0 μA IEBO Emitter cut-off current VEB=-4V; IC=0 -1.0 μA hFE DC current gain IC=-150mA ; VCE=-5V 60 Transition frequency IC=-50mA ; VCE=-10V 15 fT CONDITIONS MIN B B 2 TYP. MAX UNIT 320 MHz Inchange Semiconductor Product Specification 2SA1021 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3