Inchange Semiconductor Product Specification 2SA1077 Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SC2527 ·High transition frequency ·Excellent safe operating area APPLICATIONS ·High-frequency power amplifier ·Audio power amplifiers ·Switching regulators ·DC-DC converters PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -120 V VCEO Collector-emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -7 V -10 A 60 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SA1077 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ,RBE=∞ -120 V V(BR)CBO Collector-base breakdown voltage IC=-50μA ,IE=0 -120 V V(BR)EBO Emitter-base breakdown voltage IE=-50μA ,IC=0 -7 V Collector-emitter saturation voltage IC=-5A; IB=-0.5A -0.9 -1.8 V VBE Base-emitter on voltage IC=-5A ; VCE=-5V -1.25 -1.7 V ICBO Collector cut-off current VCB=-120V; IE=0 -50 μA ICEO Collector cut-off current VCE=-120V; IB=0 -1 mA IEBO Emitter cut-off current VEB=-7V; IC=0 -50 μA hFE-1 DC current gain IC=-1A ; VCE=-5V 60 hFE-2 DC current gain IC=-5A ; VCE=-5V 40 fT Transition frequency IC=-1A ; VCE=-10V;f=10MHz 30 COB Output capacitance IE=0 ; VCB=-10V;f=1MHz VCEsat CONDITIONS MIN TYP. MAX UNIT 200 60 300 MHz 470 pF Switching times tr tstg tf Rise time Storage time IC=-7.5A; RL=4Ω IB1=-IB2=-0.75A; Fall time 2 0.15 μs 0.5 μs 0.11 μs Inchange Semiconductor Product Specification 2SA1077 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3