Inchange Semiconductor Product Specification 2SA1096 2SA1096A Silicon PNP Power Transistors · DESCRIPTION ·With TO-126 package ·Complement to type 2SC2497/2SC2497A APPLICATIONS ·For low-frequency power amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector- emitter voltage CONDITIONS Open emitter 2SA1096 UNIT -70 V -50 Open base 2SA1096A VEBO VALUE Emitter-base voltage V -60 Open collector -5 V IC Collector current -2 A ICM Collector current-peak -3 A 1.2*1 PD Total power dissipation TC=25℃ W 5*2 Tj Junction temperature 150 ℃ Tstg Storage temperature -55～+150 ℃ Note) *1: Without heat sink *2: With a 100 × 100 × 2 mm A1 heat sink Inchange Semiconductor Product Specification 2SA1096 2SA1096A Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SA1096 V(BR)CEO Collector-emitter breakdown voltage MIN TYP. MAX UNIT -50 IC=-2mA ; IB=0 2SA1096A V -60 V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0 VCEsat Collector-emitter saturation voltage IC=-1.5A ;IB=-0.15A -1.0 V VBEsat Base-emitter saturation voltage IC=-1.5A ;IB=-0.15A -1.5 V ICEO Collector cut-off current VCE=-10V; IB=0 -1 μA ICBO Collector cut-off current VCB=-20V; IE=0 -100 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 μA hFE DC current gain IC=-1A ; VCE=-5V COB Output capacitance IE=0 ; VCB=-20V,f=1MHz 55 pF fT Transition frequency IE=-0.5A ; VCB=-5V,f=200MHz 150 MHz hFE Classifications Q R 80-160 120-220 2 -70 V 80 220 Inchange Semiconductor Product Specification 2SA1096 2SA1096A Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SA1096 2SA1096A Silicon PNP Power Transistors 4 Inchange Semiconductor Product Specification 2SA1096 2SA1096A Silicon PNP Power Transistors 5