Inchange Semiconductor Product Specification 2SA1184 Silicon PNP Power Transistors · DESCRIPTION ·With TO-126 package ·High breakdown voltage APPLICATIONS ·Audio frequency power amplifier ·High frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -120 V VCEO Collector-emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -5 V -1 A -0.1 A IC Collector current IB Base current PD Total power dissipation B Ta=25℃ 1.5 TC=25℃ 15 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55～+150 ℃ Inchange Semiconductor Product Specification 2SA1184 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0 -120 V V(BR)EBO Emitter-base breakdown voltage IE=-10μA; IC=0 -5 V Collector-emitter saturation voltage IC=-500mA; IB=-50mA -1.0 V VBE Base-emitter on voltage IC=-500mA ; VCE=-5V -1.0 V ICBO Collector cut-off current VCB=-120V; IE=0 -1 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -1 μA hFE DC current gain IC=-100mA ; VCE=-5V Transition frequency IC=-0.1A ; VCE=5V VCEsat fT CONDITIONS MIN TYP. B 2 80 MAX UNIT 240 120 MHz Inchange Semiconductor Product Specification 2SA1184 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3