Inchange Semiconductor Product Specification 2SA1185 Silicon PNP Power Transistors DESCRIPTION ·With TO-3PN package ·High current capability ·Low collector saturation voltage APPLICATIONS ·High power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -50 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -7 A ICM Collector current-peak -15 A IBM Base current-peak -5 A PC Collector power dissipation 60 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SA1185 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-0.1A ;IB=0 VCEsat Collector-emitter saturation voltage IC=-7A; IB=-0.7A -0.8 V VBE Base-emitter on voltage IC=-7A ; VCE=-5V -1.5 V ICBO Collector cut-off current VCB=-50V; IE=0 -1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -2 mA hFE-1 DC current gain IC=-1A ; VCE=-5V 60 hFE-2 DC current gain IC=-7A ; VCE=-5V 20 Cob Output capacitance IE=0 ; VCB=-10V;f=1MHz 250 pF fT Transition frequency IC=-0.5A ; VCE=-5V 100 MHz CONDITIONS hFE-1 Classifications Q P O 60-120 100-200 160-320 2 MIN TYP. MAX -50 UNIT V 320 Inchange Semiconductor Product Specification 2SA1185 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3