ISC 2SA1205

Inchange Semiconductor
Product Specification
2SA1205
Silicon PNP Power Transistors
DESCRIPTION
·With TO-3PN package
·High power dissipation
APPLICATIONS
·For general purpose applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-70
V
VCEO
Collector-emitter voltage
Open base
-50
V
VEBO
Emitter-base voltage
Open collector
-6
V
IC
Collector current
-12
A
IB
Base current
-4
A
PC
Collector power dissipation
100
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
B
TC=25℃
Inchange Semiconductor
Product Specification
2SA1205
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-25mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=-5A; IB=-0.12A
-0.5
V
ICBO
Collector cut-off current
VCB=-70V; IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-6V; IC=0
-0.1
mA
hFE
DC current gain
IC=-5A ; VCE=-0.5V
Transition frequency
IE=3A ; VCE=-12V
fT
CONDITIONS
MIN
TYP.
MAX
-50
UNIT
V
40
20
MHz
0.60
μs
0.50
μs
0.25
μs
Switching times
ton
Turn-on time
tstg
Storage time
tf
IC=-5A;RL=4Ω
IB1=-IB2=-0.12A
VCC=-20V
Fall time
2
Inchange Semiconductor
Product Specification
2SA1205
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3