ISC 2SA1209

Inchange Semiconductor
Product Specification
2SA1209
Silicon PNP Power Transistors
DESCRIPTION
·With TO-126 package
·Complement to type 2SC2911
·High breakdown voltage
·Fast switching speed
APPLICATIONS
·High-voltage switching and
AF 100W predriver applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-180
V
VCEO
Collector-emitter voltage
Open base
-160
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-0.14
A
ICM
Collector current-Peak
-0.20
A
PC
Collector power dissipation
Ta=25℃
1.0
TC=25℃
10
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SA1209
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEsat
Collector-emitter saturation voltage
ICBO
CONDITIONS
MIN
TYP.
MAX
UNIT
IC=-50mA; IB=-5mA
-0.4
V
Collector cut-off current
VCB=-80V; IE=0
-0.1
μA
IEBO
Emitter cut-off current
VEB=-4V; IC=0
-0.1
μA
hFE
DC current gain
IC=-10mA ; VCE=-5V
fT
Transition frequency
IC=-10mA ; VCE=-10V
150
MHz
Cob
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
4.0
pF
0.1
μs
1.5
μs
0.1
μs
100
400
Switching times resistive load
‹
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=10mA IB1=-IB2=1mA
hFE Classifications
R
S
T
100-200
140-280
200-400
2
Inchange Semiconductor
Product Specification
2SA1209
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
2SA1209
Silicon PNP Power Transistors
4