ISC 2SA1227A

Inchange Semiconductor
Product Specification
2SA1227 2SA1227A
Silicon PNP Power Transistors
·
DESCRIPTION
·With TO-3PFa package
·Complement to type 2SC2987/2987A
·High power dissipation
APPLICATIONS
·For use in audio frequency power
amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
2SA1227
VCBO
Collector-base voltage
-140
Open base
2SA1227A
VEBO
Emitter-base voltage
V
-160
2SA1227
Collector-emitter voltage
UNIT
-140
Open emitter
2SA1227A
VCEO
VALUE
V
-160
Open collector
-5
V
IC
Collector current
-12
A
ICM
Collector current-peak
-20
A
PT
Total power dissipation
120
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SA1227 2SA1227A
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEsat
Collector-emitter saturation voltage
VBEsat
‹
CONDITIONS
TYP.
MAX
UNIT
IC=-5A ;IB=-0.5A
-0.8
-1.5
V
Base-emitter saturation voltage
IC=-5A ;IB=-0.5A
-1.5
-2.0
V
ICBO
Collector cut-off current
VCB=-140V; IE=0
-50
μA
IEBO
Emitter cut-off current
VEB=-3V; IC=0
-50
μA
hFE-1
DC current gain
IC=-2A ; VCE=-5V
60
hFE -2
DC current gain
IC=-5A ; VCE=-5V
40
COB
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
280
pF
fT
Transition frequency
IC=-1A ; VCE=-5V
60
MHz
B
B
hFE-1 classifications
R
Q
P
60-120
100-200
160-320
MIN
2
320
Inchange Semiconductor
Product Specification
2SA1227 2SA1227A
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3