Inchange Semiconductor Product Specification 2SA1250 Silicon PNP Power Transistors DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·High breadown voltage APPLICATIONS ·For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -200 V VCEO Collector-emitter voltage Open base -200 V VEBO Emitter-base voltage Open collector -7 V -8 A 30 W IC Collector current PD Total power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SA1250 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 -200 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 -7 V VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A -1.5 V VBEsat Base-emitter saturation voltage IC=-5A; IB=-0.5A -2.0 V ICBO Collector cut-off current VCB=200V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-7V; IC=0 -10 μA hFE-1 DC current gain IC=-2A ; VCE=-1V 40 hFE-2 DC current gain IC=-5A ; VCE=-1V 20 2 MIN TYP. MAX 200 UNIT Inchange Semiconductor Product Specification 2SA1250 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3