ISC 2SA1295

isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
2SA1295
DESCRIPTION
·High Collector-Emitter Breakdown VoltageV(BR)CEO= -230V(Min)
·Good Linearity of hFE
·Complement to Type 2SC3264
APPLICATIONS
·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-230
V
VCEO
Collector-Emitter Voltage
-230
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-17
A
IB
Base Current-Continuous
-5
A
PC
Collector Power Dissipation
@ TC=25℃
200
W
TJ
Junction Temperature
150
℃
-55~150
℃
B
Tstg
Storage Temperature Range
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
2SA1295
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= -25mA ; IB= 0
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -5A; IB= -0.5A
-2.0
V
ICBO
Collector Cutoff Current
VCB= -230V; IE= 0
-100
μA
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-100
μA
hFE
DC Current Gain
IC= -5A; VCE= -4V
COB
Output Capacitance
IE= 0; VCB= -10V;ftest= 1.0MHz
500
pF
Current-Gain—Bandwidth Product
IE= 2A; VCE= -12V
35
MHz
0.35
μs
1.5
μs
0.3
μs
fT
CONDITIONS
MIN
TYP.
MAX
-230
UNIT
V
B
50
140
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
‹
IC= -5A ,RL= 12Ω,
IB1= -IB2= -0.5A,VCC= -60V
Fall Time
hFE Classifications
O
Y
50-100
70-140
isc Website:www.iscsemi.cn
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