Inchange Semiconductor Product Specification 2SA1304 Silicon PNP Power Transistors · DESCRIPTION ·With TO-220Fa package ·Complement to type 2SC3296 ·High breakdown voltage APPLICATIONS ·Power amplifier applications ·Vertical output applicatios PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT V VCBO Collector-base voltage Open emitter -150 VCEO Collector-emitter voltage Open base -150 VEBO Emitter-base voltage Open collector -5 V IC Collector current -1.5 A IB Base current -0.5 A PC Collector power dissipation B TC=25℃ 20 Ta=25℃ 2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SA1304 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-10mA , IB=0 VCEsat Collector-emitter saturation voltage IC=-500mA; IB=-50mA -1.5 V VBE Base-emitter on voltage IC=-500mA ; VCE=-10V -0.85 V ICBO Collector cut-off current VCB=-120V;IE=0 -10 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 μA hFE DC current gain IC=-500mA ; VCE=-10V Cob Output capacitance IE=0; VCB=-10V,f=1MHz 55 pF fT Transition frequency IC=-500mA ; VCE=-10V 4 MHz B MIN TYP. -150 UNIT V B 2 MAX 40 140 Inchange Semiconductor Product Specification 2SA1304 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 Inchange Semiconductor Product Specification 2SA1304 Silicon PNP Power Transistors 4